L05ESDU5V0CE2.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 L05ESDU5V0CE2 데이타시트 다운로드

No Preview Available !

ESD PROTECTION DIODE
L05ESDU5V0CE2
STAND-OFF VOLTAGE - 5.0 Volts
POWER DISSIPATION - 50 Watts
GENERAL DESCRIPTION
The L05ESDU5V0CE2 is ultra low capacitance TVS arrays
designed to protect high speed data interfaces. This series
has been specifically designed to protect sensitive
components which are connected to high-speed data and
transmission lines from overvoltage caused by ESD
(electrostatic discharge), CDE (Cable Discharge Events),
and EFT (electrical fast transients).
A
A1
FEATURES
• Protects one data or I/O line
• Low capacitance
• Low clamping voltage
• IEC 61000-4-2, level 4 (ESD), > ±15KV (AIR) ;
> ±8KV (CONTACT).
E
APPLICATION
• Cellular Handsets & Accessories
• Digital Visual Interface (DVI)
• RF Circuits
• Display Port
• USB Ports
• MDDI Ports
• PCI Express
L
1
MECHANICAL DATA
• Case material: “Green” molding compound UL
flammability classification 94V-0 (No Br, Sb, Cl),
• Component in accordance to RoHs 2002/95/EC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
ABSOLUTE RATINGS
PARAMETER
Peak pulse power (8/20us waveform)
Peak pulse current (8/20us waveform)
Operating junction temperature range
Storage temperature range
Soldering temperature, t max = 10s
ELECTRICAL CHARACTERISTICS
SYMBOL
PPPM
IPP
TJ
TSTG
TL
PARAMETER
Reverse standoff voltage
Reverse leakage current
Breakdown voltage
Junction capacitance (each I/O pin and ground)
Clamping voltage
TEST CONDITIONS
--
VDRM = 5V
IR = 1 mA
VR = 0V, f = 1 MHz,
IPP = 1A (8/20 us)
IPP = 4A (8/20 us)
SYMBOL
VDRM
IRM
VBR
CJ
VCL
SOD-882
SOD-882
DIM. MIN. MAX.
A 0.47 0.53
A1 0.00 0.05
b 0.25 0.55
D
D 0.95 1.075
E 0.55 0.675
b L 0.20 0.45
All dimension in
millimeter
PIN ASSIGNMENT
2 1 Cathode
2 Cathode
MIN.
--
--
6.0
--
--
--
VALUE
50
4
-55 to +125
-55 to +150
260
UNIT
W
A
°C
°C
°C
TYP.
MAX.
UNIT
-- 5.0 V
-- 1 uA
-- -- V
0.5 0.6 pF
-- 11
V
-- 12.5
REV. 3, OCT.-2014, TSIR70

No Preview Available !

RATING AND CHARACTERISTIC CURVES
L05ESDU5V0CE2
100%
Figure 1. 8/20 us pulse waveform
according to IEC 61000-4-5
1000
100
10
1
1 10 100 1000
Pulse Time (us)
Figure 3. Power Dissipation versus Pulse Time
2
10%
tr = 0.7 ~1 ns
Time (ns)
30 ns
60 ns
Figure 2. ESD pulse waveform
according to IEC 61000-4-2
1.2
0.8
0.4
0
0 25 50 75 100 125
Junction Temperature ( )
Figure 4. Peak pulse power versus TJ
100.0
150
1
TJ=25°C, F=1MHz, VOSC=100mV
0
012345
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
10.0
1.0
0.1
25
50 75 100
Junction Temperature ( )
125
Figure 6. Reverse Leakage Current versus TJ

No Preview Available !

RATING AND CHARACTERISTIC CURVES
L05ESDU5V0CE2
I/O1
+/-8KV
ESD Contact
discharge
V (i/o)
Figure 7. ESD Test Configuration
Figure 8. Clamped +8 kV ESD voltage waveform
Figure 9. Clamped -8 kV ESD voltage waveform

No Preview Available !

Application Information
L05ESDU5V0CE2
Figure 10. Cellular Handsets & Accessories ESD Protection
Figure 11. DVI ESD Protection
Figure 12. RF Circuit ESD Protection

No Preview Available !

Application Information
L05ESDU5V0CE2
Figure 13. Display Port ESD Protection
Figure 14. USB2.0 Interface ESD Protection
Figure 15. MDDI ESD Protection