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LITE-ON
SEMICONDUCTOR
L03ESDL5V0CE2
BIDIRECTIONAL
ESD PROTECTION DIODE
GENERAL DESCRIPTION
The L03ESDL5V0CE2 is designed to protect sensitive electronics
from damage or latch up due to ESD, lightning, and other voltage
induced transient events.
FEATURES
Bi-directional ESD Protectionof one line.
Max. peak pulse power : Ppp = 30W at tp = 8/20 us
Low clamping voltage
IEC 61000-4-2, level 4 ( ESD ), > 15KV ( air ) ; > 8KV ( contact ).
Qualified to AEC-Q101 Rev_C
APPLICATION
Computers and peripherals
Communication system
Audio & video equipment
Portable lnstrumentation
MECHANICAL DATA
Case Material: "Green" molding compound UL flammability
classification 94V-0 (No Br.Sb, Cl)
Component in accordance to RoHs 2011/65/EU
STAND-OFF VOLTAGE - 5.0 Volts
POWER DISSIPATION - 30 WATTS
SOD-882
SOD-882
DIM. MIN. MAX.
A 0.47 0.53
A1 0.00 0.05
b 0.25 0.55
D 0.95 1.075
E 0.55 0.675
L 0.20 0.45
All Dimensions in millimeter
PIN ASSIGNMENT
1 Cathode
2 Cathode
MAXIMUM RATINGS (Tj= 25unless otherwise noticed)
Rating
Peak pulse Power ( 8/20us Waveform )
Peak Pulse Current ( 8/20us Waveform )
Operating Junction Temperature Range
Storage Temperature Range
Soldering Temperature, t max = 10s
ELECTRICAL CHARACTERISTICS (Tj= 25unless otherwise noticed)
Parameter
Symbol
Conditions
Reverse standoff voltage
Reverse leakage current
Breakdown voltage
Junction capacitance
Clamping voltage
Clamping voltage
VDRM
IRM
VBR
CJ
VCL
VCL
---
VDRM = 5 V
IR = 1 mA
VR = 0 V , f = 1MHz
IPP = 1 A ( 8/20us )
IPP = 2 A ( 8/20us )
Symbol
PPPM
IPP
TJ
Tstg
TL
Value
30
2
-55 to + 105
-55 to + 150
260
Unit
W
A
Min. Typ. Max. Unit
--- --- 5.0 V
--- --- 100 nA
5.5 --- 9.5 V
--- 3.0 3.5 pF
--- --- 12 V
--- --- 15 V
REV.5 Jan-2017, KSIR51

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RATING AND CHARACTERISTIC CURVES
L03ESDL5V0CE2
Figure 1. 8/20 us pulse waveform
according to IEC 61000-4-5
100
Figure 2. ESD pulse waveform
according to IEC 61000-4-2
1.2
0.8
10
TJ =25, tp (us) = 8/20 us
exponentially decay waveform
1
1 10 100 1000
Pulse Time (us)
Figure 3. Power Dissipation versus Pulse Time
0.4
0
0 25 50 75 100 125
Junction Temperature
Figure 4. Peak pulse power versus TJ
150
5
4
3
2
1
TJ =25, f=1MHz, Vosc=100mV
0
0123
Reverse Voltage (V)
4
5
Figure 5. Typical Junction Capacitance
100.0
10.0
1.0
0.1
0
25 50 75 100 125
Junction Temperature ()
150
Figure 6. Reverse Leakage Current versus TJ

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RATING AND CHARACTERISTIC CURVES
L03ESDL5V0CE2
I/O1
+/-8KV
ESD Contact
discharge
V (i/o)
Figure 7. ESD Test Configuration
Figure 8. Clamped +8 kV ESD voltage waveform Figure 9. Clamped -8 kV ESD voltage waveform

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RATING AND CHARACTERISTIC CURVES
L03ESDL5V0CE2
Marking & Orientation
Packaging Information
DEVICE
L03ESDL5V0CE2
Q'TY/REEL
(PCS)
10K
REEL DIA.
(INCH)
7
Q'TY/BOX Q'TY/CARTON
(PCS)
(PCS)
150K
300K
SOD-882 Soldering Pad Layout

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Legal Disclaimer Notice
L03ESDL5V0CE2
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design, purchase or use.
LSC makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does LSC assume any liability for
application assistance or customer product design. LSC does not warrant or
accept any liability with products which are purchased or used for any unintended
or unauthorized application.
No license is granted by implication or otherwise under any intellectual property
rights of LSC.
LSC products are not authorized for use as critical components in life support
devices or systems without express written approval of LSC.