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LITE-ON
SEMICONDUCTOR
ESD PROTECTION DEVICE
GENERAL DESCRIPTION
The L04ESD5V0CP2 is designed to protect sensitive semiconductor
components from damage or upset due to Electro Static Discharge
(ESD).
FEATURES
Protects one data or I/O line
Max. peak pulse power : Ppp = 40W at tp = 8/20 us.
Low clamping voltage
IEC 61000-4-2, level 4 ( ESD ), > ±15KV ( air ) ; > ±8KV ( contact )
APPLICATION
Computers and peripherals
Communication system
Audio & video equipment
Portable lnstrumentation
MECHANICAL DATA
Terminals: Lead Free Plating (Matte Tin Finish)
Component in accordance to RoHs 2002/95/E
L04ESD5V0CP2
STAND-OFF VOLTAGE – 5.0 Volts
POWER DISSIPATION – 40 WATTS
SOD-923
SOD-923
DIM. MIN. MAX.
A 0.36 0.41
B 0.18 0.26
C 0.08 0.14
D 0.76 0.84
E 0.56 0.64
F 0.92 1.08
All Dimensions in millimeter
PIN A SSIGNMENT
1 Cathode
2 Cathode
Marking & Orientation
MAXIMUM RATINGS (Tj= 25unless otherwise noticed)
Rating
Peak Pulse Power (tp = 8/20us)
Peak Pulse Current (tp = 8/20us)
Operating Junction Temperature Range
Storage Temperature Range
Soldering Temperature, t max = 10s
Symbol
Ppk
Ipp
TJ
Tstg
TL
Value
40 (Max)
3.5
-55 to + 125
-55 to + 150
260
Unit
W
A
ELECTRICAL CHARACTERISTICS (Tj= 25unless otherwise noticed)
Parameter
Symbol
Conditions
Reverse standoff voltage
Breakdown voltage
Reverse leakage current
Clamping Voltage
Clamping Voltage
Junction capacitance
VRWM
VBR
IRM
VC
VC
CJ
IR = 1 mA
VDRM = 5V
IPP = 1A, tp = 8/20µs
IPP = 3.5A, tp = 8/20µs
VR = 0V, f = 1MHz
MIn Typ Max Unit
--- --- 5.0 V
5.5 --- 8.5
V
--- ---- 0.1 uA
--- --- 9.0 V
---
--- 12.5
V
--- 4.5 --- pF
REV. 2, Oct-2010, KSIR27

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RATING AND CHARACTERISTIC CURVES
L04ESD5V0CP2
Figure 1. 8/20 us pulse waveform
according to IEC 61000-4-5
1000
100
Figure 2. ESD pulse waveform
according to IEC 61000-4-2
1.2
0.8
10
TJ =25, tp (us) = 8/20 us
exponentially decay waveform
1
1 10 100
Pulse Time (us)
1000
Figure 3. Power Dissipation versus Pulse Time
0.4
0
0 25 50 75 100 125 150
Junction Temperature ()
Figure 4. Peak pulse power versus TJ
1000.0
5
4 100.0
3
2
1 TJ =25, f=1MHz, Vosc=100mV
10.0
1.0
0
01234
Reverse Voltage (V)
Figure 5. Typical Junction Capactiance
5
0.1
0
25 50 75 100 125
Junction Temperature ()
150
Figure 6. Reverse Leakage Current versus TJ

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RATING AND CHARACTERISTIC CURVES
L04ESD5V0CP2
+/-8KV
ESD Contact
discharge
I/O1
V (i/o)
Figure 7. ESD Test Configuration
Figure 8. Clamped +8 kV ESD voltage waveform Figure 9. Clamped -8 kV ESD voltage waveform

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Legal Disclaimer Notice
L04ESD5V0CP2
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design, purchase or use.
LSC makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does LSC assume any liability for
application assistance or customer product design. LSC does not warrant or
accept any liability with products which are purchased or used for any unintended
or unauthorized application.
No license is granted by implication or otherwise under any intellectual property
rights of LSC.
LSC products are not authorized for use as critical components in life support
devices or systems without express written approval of LSC.