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May 2009
FEATURES
Originative New Design
100% EAS Test
Rugged Gate Oxide Technology
Extremely Low Intrinsic Capacitances
Remarkable Switching Characteristics
Unequalled Gate Charge : 15 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 3.8 Ω (Typ.) @VGS=10V
APPLICATION
Low power battery chargers
Switch mode power supply (SMPS)
AC adaptors
PFP4N80/PFF4N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) = 4.8 Ω
ID = 3.5 A
TO-220
Drain
Gate
◀▲
Source
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
PFP4N80
PFF4N80
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Continuous (TC = 25℃)
Continuous (TC = 100℃)
Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
800
3.5 3.5*
2.2 2.2*
14.0 14.0*
±30
320
3.5
10.7
5.5
107 39
0.85 0.31
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
PFP4N80
1.17
0.5
62.5
PFF4N80
3.2
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
℃/W
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Electrical Characteristics TC=25 C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 1.75 A
3.0
--
Off Characteristics
BVDSS
ΔBVDSS
/ΔTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 ㎂, Referenced to25℃
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 400 V, ID = 3.5 A,
RG = 25
(Note 4,5)
VDS = 640 V, ID = 3.5 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 3.5 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 3.5 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
Typ Max Units
-- 5.0
3.8 4.8
V
-- -- V
1.0 -- V/℃
-- 10
-- 100
-- 100
-- -100
550 715
60 80
8 10
20 50
50 110
40 90
40 90
15 20 nC
3.5 -- nC
7.5 -- nC
-- 3.0
-- 12.0
-- 1.5
550 --
0.3 --
A
V
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=3.5A, VDD=50V, RG=25, Starting TJ =25C
3. ISD≤3.5A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
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Typical Characteristics
101
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100
Bottom :
6.0 V
5.5 V
10-1
10-2
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
10
8 VGS = 10V
VGS = 20V
6
4
Note : T = 25
J
2
02468
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
900
800
700
600
500
400
300
200
100
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Aug 2006
101
100
10-1
2
150oC
25oC
-55oC
Notes :
1. V = 50V
DS
2. 250μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.4 0.6 0.8 1.0
V , Source-Drain voltage [V]
SD
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 160V
10
VDS = 400V
8 VDS = 640V
6
4
2
Note : I = 3.5A
D
0
0 2 4 6 8 10 12 14 16
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. V = 0 V
GS
2. I = 250 μ A
D
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 1.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R
DS(on)
101
1 ms
10 ms
100 DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
for PFP4N80
Operation in This Area
is Limited by R DS(on)
101 100 us
1 ms
10 ms
100
DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 10. Maximum Safe Operating Area
for PFF4N80
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
TC, Case Temperature []
Figure 11. Maximum Drain Current vs Case Temperature
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Typical Characteristics (continued)
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
single pulse
Notes :
1. Zθ JC(t) = 1.17 /W Max.
2. Duty Factor, D=t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
JC(t)
PDM
t1t2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 12. Transient Thermal Response Curve for PFP4N80
D=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
single pulse
Notes :
1. Zθ JC(t) = 3.2 /W Max.
2. Duty Factor, D=t1/t2
3.
T
JM
-
T
C
=
P
DM
*
Zθ
JC(t)
PDM
t1t2
10-2
10-5
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 13. Transient Thermal Response Curve for PFF4N80
Aug 2006
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