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MME70R380P Datasheet
MME70R380P
700V 0.38N-channel MOSFET
Description
MME70R380P is power MOSFET using magnachips advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Key Parameters
Parameter
VDS @ Tj,max
RDS(on),max
VTH,typ
ID
Qg,typ
Value
750
0.38
3
11
34
Unit
V
V
A
nC
Package & Internal Circuit
D
D
G
S
G
S
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Motor Control
DC DC Converters
Ordering Information
Order Code
Marking
MME70R380PRH 70R380P
Temp. Range
-55 ~ 150
Package
TO-263
(D2-PAK)
Jul. 2014 Revision 1.0
1
Packing
Reel
RoHS Status
Halogen Free
MagnaChip Semiconductor Ltd.

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MME70R380P Datasheet
Absolute Maximum Rating (Tc=25unless otherwise specified)
Parameter
Drain Source voltage
Gate Source voltage
Continuous drain current
Pulsed drain current(1)
Power dissipation
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Diode dv/dt ruggedness(2)
Storage temperature
Maximum operating junction
temperature
1) Pulse width tP limited by Tj,max
2) ISD ID, VDS peak V(BR)DSS
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
dv/dt
dv/dt
Tstg
Tj
Rating
700
±30
11
7
33
101
215
50
15
-55 ~150
150
Unit
V
V
A
A
A
W
mJ
V/ns
V/ns
Note
TC=25
TC=100
Thermal Characteristics
Parameter
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Symbol
Rthjc
Rthja
Value
1.24
62.5
Unit
/W
/W
Jul. 2014 Revision 1.0
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MME70R380P Datasheet
Static Characteristics (Tc=25unless otherwise specified)
Parameter
Drain Source
Breakdown voltage
Gate Threshold Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Drain-Source On
State Resistance
Symbol Min. Typ. Max. Unit Test Condition
V(BR)DSS 700
-
-
V VGS = 0V, ID=0.25mA
VGS(th) 2 3 4
V VDS = VGS, ID=0.25mA
IDSS - - 1 μA VDS = 600V, VGS = 0V
IGSS
RDS(ON)
- - 100 nA VGS = ±30V, VDS =0V
- 0.34 0.38 VGS = 10V, ID = 3.2 A
Dynamic Characteristics (Tc=25unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Condition
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Energy Related (3)
Turn On Delay Time
Ciss
Coss
Crss
Co(er)
td(on)
- 1061 -
- 823 -
- 50 -
- 30 -
- 20 -
VDS = 25V, VGS = 0V,
pF f = 1.0MHz
VDS = 0V to 560V,
VGS = 0V,f = 1.0MHz
Rise Time
Turn Off Delay Time
tr
td(off)
- 38 -
- 101 -
ns
VGS = 10V, RG = 25Ω,
VDS = 350V, ID = 11A
Fall Time
tf - 38 -
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Qg - 34 -
Qgs
- 6.7 -
nC
VGS = 10V, VDS = 560V,
ID = 11A
Qgd - 22.4 -
Gate Resistance
RG
- 3.5 -
VGS = 0V, f = 1.0MHz
3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS
Jul. 2014 Revision 1.0
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MME70R380P Datasheet
Reverse Diode Characteristics (Tc=25unless otherwise specified)
Parameter
Continuous Diode Forward
Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Symbol Min. Typ. Max. Unit Test Condition
ISD - - 11 A
VSD - - 1.4 V ISD = 11A, VGS = 0V
trr
- 385 -
ns
ISD = 11A
Qrr
- 4.8 -
μC di/dt = 100 A/μs
VDD = 100V
Irrm
- 25.0 -
A
Jul. 2014 Revision 1.0
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Characteristic Graph
MME70R380P Datasheet
Jul. 2014 Revision 1.0
5 MagnaChip Semiconductor Ltd.