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STB60NF10
STB60NF10-1 - STP60NF10
N-channel 100V - 0.019- 80A - TO-220 - D2PAK - I2PAK
STripFET™ II Power MOSFET
General features
Type
STB60NF10
STB60NF10-1
STP60NF10
VDSS
(@Tjmax)
100V
100V
100V
RDS(on)
<0.023
<0.023
<0.023
Exceptional dv/dt capability
100% avalanche tested
ID
80A
80A
80A
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Applications
Switching application
3
1
D²PAK
123
I²PAK
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STB60NF10T4
STB60NF10-1
STP60NF10
September 2006
Marking
B60NF10
B60NF10
P60NF10
Rev 4
Package
D²PAK
I²PAK
TO-220
Packaging
Tape & reel
Tube
Tube
1/15
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Contents
Contents
STB60NF10 - STB60NF10 -1 - STP60NF10
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STB60NF10 - STB60NF10 -1 - STP60NF10
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID(1) Drain current (continuous) at TC = 25°C
ID Drain current (continuous) at TC=100°C
IDM(2) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
EAS (4) Single pulse avalanche energy
Tstg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD 80A, di/dt 300A/µs, VDD V(BR)DSS, TJ TJMAX
4. Starting TJ = 25 oC, ID = 40A, VDD = 30V
Table 2. Thermal data
Symbol
Parameter
RthJC
RthJA
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
100
± 20
80
66
320
300
2
16
485
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
J
°C
Value
0.5
62.5
300
Unit
°C/W
°C/W
°C
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Electrical characteristics
STB60NF10 - STB60NF10 -1 - STP60NF10
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
100
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1 µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
2 3 4V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 40A
0.019 0.023
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1) Forward transconductance VDS = 25V, ID = 40A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 50V, ID = 80A
VGS =10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
78 S
4270
470
140
pF
pF
pF
104 nC
20 nC
32 nC
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STB60NF10 - STB60NF10 -1 - STP60NF10
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 50V, ID= 40A,
RG=4.7Ω, VGS=10V
Figure 13 on page 8
Min. Typ. Max. Unit
17 ns
56 ns
82 ns
23 ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80A, VGS = 0
ISD = 80A,
di/dt = 100A/µs,
VDD = 25V, TJ = 150°C
Figure 15 on page 8
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
80 A
320 A
1.3 V
92 ns
340 nC
7.4 A
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