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STB80NF10
STP80NF10
N-channel 100 V, 0.012 , 80 A, TO-220, D2PAK
low gate charge STripFET™ II Power MOSFET
Features
Type
STP80NF10
STB80NF10
VDSS
100 V
100 V
RDS(on)
max
< 0.015
< 0.015
Exceptional dv/dt capability
100% Avalanche tested
Application oriented characterization
ID
80 A
80 A
Applications
Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.
3
2
1
TO-220
3
1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STP80NF10
P80NF10@
STB80NF10T4
B80NF10@
Package
TO-220
D²PAK
Packaging
Tube
Tape and reel
April 2009
Doc ID 6958 Rev 18
1/14
www.st.com
14

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Contents
Contents
STB80NF10, STP80NF10
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/14 Doc ID 6958 Rev 18

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STB80NF10, STP80NF10
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID(1)
ID (1)
IDM(2)
PTOT
dv/dt (3)
EAS(4)
Tstg
Tj
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD < 80 A, di/dt < 300 A/µs, VDD= 80% V(BR)DSS
4. Starting Tj = 25 °C, ID = 40 A, VDD = 50 V
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Electrical ratings
Value
100
±20
80
80
320
300
2
7
350
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
0.5
62.5
300
Unit
°C/W
°C/W
°C
Doc ID 6958 Rev 18
3/14

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Electrical characteristics
2 Electrical characteristics
STB80NF10, STP80NF10
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS = 0
100
V
VDS = Max rating
VDS = Max rating @125°C
500 nA
10 µA
VGS = ±20 V
±100 nA
VDS = VGS, ID = 250 µA 2 3
4V
VGS = 10 V, ID = 40 A
0.012 0.015
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V , ID =40 A
VDS = 25 V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 50 V, ID = 80 A,
VGS = 10 V
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
-
Typ.
50
Max. Unit
S
5500
- 700
175
pF
pF
pF
135 182 nC
- 23
nC
51.3 nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 50 V, ID= 40 A,
RG = 4.7 Ω, VGS=10 V
(see Figure 15)
Min.
-
Typ.
26
80
116
60
Max. Unit
ns
ns
-
ns
ns
4/14 Doc ID 6958 Rev 18

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STB80NF10, STP80NF10
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
ISD
ISDM(1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width limited by safe operating area
2. Pulse duration=300µs, duty cycle 1.5%
Test conditions
ISD = 80 A, VGS = 0
ISD=80 A, VDD = 50 V
di/dt = 100 A/µs,
Tj=150 °C
Min. Typ. Max Unit
- 80 A
- 320 A
- 1.3 V
106
- 450
8.5
ns
nC
A
Doc ID 6958 Rev 18
5/14