90N15.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 90N15 데이타시트 다운로드

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Advance Technical Information
High Current
MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 90N15
V
DSS
ID25
R
DS(on)
=
=
=
150 V
90 A
16 m
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
I
D(RMS)
IDM
I
AR
E
AR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
M
d
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 M
Continuous
Transient
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Maximum ratings
150 V
150 V
±20 V
±30 V
90 A
75 A
360 A
90 A
45 mJ
1.5 J
5 V/ns
TO-264 AA (IXTK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
390
-55 ... +150
150
-55 ... +150
300
0.7/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Internationalstandardpackage
Fastswitchingtimes
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ±20 V DC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
R
DS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 ms, duty cycle d 2%
Characteristic Values
Min. Typ.
Max.
150 V
2.0 4.0 V
±100 nA
50 µA
2 mA
16 m
Applications
Motorcontrols
DC choppers
Switched-mode power supplies
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
© 2002 IXYS All rights reserved
98876 (01/02)

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IXTK 90N15
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
g
fs
VDS = 10 V; ID = 0.5 ID25, pulse test
Characteristic values
Min. Typ. Max.
50 65
S
Ciss
6400
pF
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
1700
pF
Crss 510 pF
td(on)
28 ns
t
r
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
30
ns
t
d(off)
RG = 1.5 (External)
115 ns
t
f
17 ns
Q
g(on)
Q
gs
Q
gd
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
240
55
85
nC
nC
nC
R
thJC
R
thCK
0.15
0.30 K/W
K/W
Source-Drain Diode
Symbol Test Conditions
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IS VGS = 0V
90 A
ISM Repetitive; pulse width limited by TJM
360 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.5 V
trr IF = 30A, -di/dt = 100 A/µs, VR = 100V
Qrr
300 ns
6 µC
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025