B1064.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 B1064 데이타시트 다운로드

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Complement to type 2SD1505
·Low collector saturation voltage
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Product Specification
2SB1064
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-60
-50
-5
-3
-4.5
-0.5
30
150
-55~150
UNIT
V
V
V
A
A
A
W

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
Product Specification
2SB1064
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0
-50
V
V(BR)CBO Collector-base breakdown voltage
IC=-50µA ,IE=0
-60
V
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA ,IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
-1.0 V
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.5 V
ICBO Collector cut-off current
VCB=-40V; IE=0
-1.0 µA
IEBO Emitter cut-off current
VEB=-4V; IC=0
-1.0 µA
hFE DC current gain
IC=-0.5A ; VCE=-3V
60 320
COB Output capacitance
IE=0 ; VCB=-10V,f=1MHz
50 pF
fT Transition frequency
IC=-0.5A ; VCE=-5V
70 MHz
2

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1064
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3