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Alfa-MOS
Technology
General Description
AFP7113WS, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line power
loss are needed in commercial industrial
surface mount applications.
Pin Description ( DFN3X3-8L )
AFP7113WS
100V P-Channel
Enhancement Mode MOSFET
Features
-100/-7.0A,RDS(ON)= 87mΩ@VGS= -10V
-100/-5.0A,RDS(ON)= 95mΩ@VGS= -4.5V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
DFN3X3-8L package design
Application
DC-DC Converter
POL
Pin Define
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP7113WSFN338RG
7113WS
DFN3X3-8L
YY year code
MM month code
DD date code
AFP7113WSFN338RG : 13”Tape & Reel ; Pb- Free ; Halogen –Free
Unit
Tape & Reel
Quantity
5000 EA
©Alfa-MOS Technology Corp.
Rev.A Dec. 2017
www.alfa-mos.com
Page 1

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Alfa-MOS
Technology
AFP7113WS
100V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TC=25
TC=70
TA=25
TA=70
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-100
±20
-9.0
-6.0
-15
-9.0
28
18
150
-55/150
120
Unit
V
V
A
A
A
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Dec. 2017
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID= -250uA
VDS=VGS,ID= -250uA
VDS=0V,VGS= ±20V
VDS= -80V,VGS=0V
VDS= -80V,VGS=0V
TJ=85
VDS-10V,VGS= -10V
VGS = -10V,ID=-7.0A
VGS = -4.5V,ID=-5.0A
VDS= -15V,ID= -3.5A
IS= -2A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-50V,VGS=-4.5V
ID= -4.0A
VDS=-50V,VGS=0V
f=1MHz
VDD=-50V,RL=12.5Ω
ID-4.0A,VGEN=-10V
RG=1Ω
Min. Typ Max. Unit
-100
-1.0
-2.5
±100
-1
-30
V
nA
uA
-25 A
77
85
87
95
mΩ
19 S
-0.8 -1.3 V
20 40
5 nC
10
1800
150 pF
100
15 30
15
45
30
90
ns
15 30
www.alfa-mos.com
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Alfa-MOS
Technology
Typical Characteristics
AFP7113WS
100V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Dec. 2017
www.alfa-mos.com
Page 3

No Preview Available !

Alfa-MOS
Technology
Typical Characteristics
AFP7113WS
100V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Dec. 2017
www.alfa-mos.com
Page 4

No Preview Available !

Alfa-MOS
Technology
Typical Characteristics
AFP7113WS
100V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Dec. 2017
www.alfa-mos.com
Page 5