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2SB1078(K)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD1377(K)
Outline
TO-220AB
2
1
23
1. Base
2. Collector
(Flange)
3. Emitter
1
3.4 k
(Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC*1
Tj
Tstg
Rating
–120
–120
–7
–8
–12
40
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C

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2SB1078(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
–120
Emitter to base breakdown
voltage
V(BR)EBO
–7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
ICBO
ICEO
hFE
VCE(sat)1
1000
Base to emitter saturation
voltage
VCE(sat)2
VBE(sat)1
Turn on time
Storage time
Fall time
Note: 1. Pulse test
VBE(sat)2
ton
tstg
tf
Typ
1.5
2.0
0.5
Max Unit
—V
—V
–100 µA
–10 µA
20000
–1.5 V
–3.0 V
–2.0 V
–3.5 V
µs
µs
µs
Test conditions
IC = –25 mA, RBE =
IE = –50 mA, IC = 0
VCB = –120 V, IE = 0
VCE = –100 V, RBE =
VCE = –3 V, IC = –4 A*1
IC = –4 A, IB = –8 mA*1
IC = –8 A, IB = –80 mA*1
IC = –4 A, IB = –8 mA*1
IC = –8 A, IB = –80 mA*1
IC = –4 A, IB1 = –IB2 = –8 mA
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case Temperature TC (°C)
Area of Safe Operation
–30
iC (peak)
1 µs
–10
IC (max)
–3
–1.0
–0.3 Ta = 25°C
1 Shot pulse
–0.1
–0.03
–1.0 –3 –10 –30 –100 –300 –1,000
Collector to emitter Voltage VCE (V)
2

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2SB1078(K)
Typical Output Characteristics
–10
TC = 25°C
–1.5 mA
–2 mA
–8
–2.5 mA
–3 mA
–6
–1 mA
–4 IB = –0.5 mA
–2
0 –1 –2 –3 –4 –5
Collector to emitter Voltage VCE (V)
30,000
10,000
3,000
1,000
DC Current Transfer Ratio vs.
Collector Current
Ta
=
75°C
25°C
VCE = –3 V
Pulse
–25°C
300
100
30
–0.1 –0.2 –0.5 –1.0 –2
–5
Collector current IC (A)
–10
Saturation Voltage vs. Collector Current
–10
–5 200
500
–2
–1.0
–0.5
VBE (sat)
VCE (sat)
lC/lB = 200
500
–0.2
–0.1
–0.1 –0.2
Ta = 25°C
Pulse
–0.5 –1.0 –2 –5 –10
Collector current IC (A)
Switching Time vs. Collector Current
10
5
tstg
2
ton
1.0 tf
0.5
0.2
Ta = 25°C
VCC = –30 V
IC = 500 IB1 = –500 IB2
0.1
–0.1 –0.2 –0.5 –1.0 –2
–5
Collector current IC (A)
–10
3

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2SB1078(K)
Transient Thermal Resistance
100
30
10
0.1 s~10 s
3
1.0 1 ms~100 ms
0.3
0.1
0.1
1.0
TC = 25°C
1.0 10 (s)
10
Time t
100 (ms)
4

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2SB1078(K)
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Hitachi Europe GmbH
Semiconductor & IC Div.
Electronic Components Group
2000 Sierra Point Parkway
Continental Europe
Brisbane, CA. 94005-1835
Dornacher Straße 3
USA
D-85622 Feldkirchen
Tel: 415-589-8300
München
Fax: 415-583-4207
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
.
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
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