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Alfa-MOS
Technology
General Description
AFN3488W, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line power
loss are needed in commercial industrial
surface mount applications.
Pin Description ( TSOP-6 )
AFN3488W
60V N-Channel
Enhancement Mode MOSFET
Features
60V/6.0A,RDS(ON)=36m@VGS=10V
60V/4.2A,RDS(ON)=40m@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSOP-6 package design
Application
Portable Equipment
Battery Powered System
Net Working System
Pin Define
Pin
1
2
3
4
5
6
Symbol
D
D
G
S
D
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3488WTS6RG
88WYW
TSOP-6
ϡʳ 88W parts code
ϡʳ Y
year code ( 0 ~ 9 )
ϡʳ W
week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFN3488WTS6RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Mar. 2016
Description
Drain
Drain
Gate
Source
Drain
Drain
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
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Alfa-MOS
Technology
AFN3488W
60V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
60
±20
6.5
4.5
20
1.6
2.0
1.3
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Mar. 2016
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=48V,VGS=0V
VDS=48V,VGS=0V
TJ=85к
VDSЊ5V,VGS=10V
VGS=10V,ID=6.0A
VGS=4.5V,ID=4.2A
VDS=15V,ID=4.6A
IS=2.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V,VGS=4.5V
ID4.6A
VDS=30V,VGS=0V
f=1MHz
VDD=30V,RL=5.4
ID5.6A,VGEN=10V
RG=1
Min. Typ Max. Unit
60 V
1.0 2.0
±100 nA
1
10 uA
6A
28
32
36
40
m
20 S
0.85 1.3 V
10 20
3.5 nC
4.2
950
85 pF
50
10 20
15
25
30
50
ns
10 20
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Alfa-MOS
Technology
Typical Characteristics
AFN3488W
60V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Mar. 2016
www.alfa-mos.com
Page 3

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Alfa-MOS
Technology
Typical Characteristics
AFN3488W
60V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Mar. 2016
www.alfa-mos.com
Page 4

No Preview Available !

Alfa-MOS
Technology
Typical Characteristics
AFN3488W
60V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Mar. 2016
www.alfa-mos.com
Page 5