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Alfa-MOS
Technology
General Description
AFP1427, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line power
loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-363 )
AFP1427
20V P-Channel
Enhancement Mode MOSFET
Features
-20V/-4.0A,RDS(ON)=48m@VGS=4.5V
-20V/-3.2A,RDS(ON)=58m@VGS=2.5V
-20V/-2.8A,RDS(ON)=78m@VGS=1.8V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-363 package design
Application
Power Management in Note book
Portable Equipment
Battery Powered System
Net Working System
Pin Define
Pin
1
2
3
4
5
6
Symbol
D
D
G
S
D
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP1427S36RG
27YW
SOT-363
ϡʳ 27
ϡʳ Y
ϡʳ W
parts code
year code ( 0 ~ 9 )
week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFP1427S36RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Dec. 2014
Description
Drain
Drain
Gate
Source
Drain
Drain
Unit
Tape & Reel
Quantity
3000 EA
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Alfa-MOS
Technology
AFP1427
20V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-20
±12
-3.0
-2.0
-8
-1.4
1.5
1.0
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Dec. 2014
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
VDS=-16V,VGS=0V
VDS=-16V,VGS=0V
TJ=85к
VDSЊˀ5V,VGS=-4.5V
VDSЊˀ5V,VGS=-2.5V
VGS=-4.5V,ID=-4.0A
VGS=-2.5V,ID=-3.2A
VGS=-1.8V,ID=-2.8A
VDS=-5V,ID=-3.6A
IS=-1.6A,VGS=0V
Qg
Qgs
Qgd
VDS=-10V,VGS=-4.5V
ID-4.0A
Ciss
Coss
Crss
VDS=-10V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=-10V,RL=2.3
ID-4.0A,VGEN=-4.5V
RG=1
Min. Typ Max. Unit
-20 V
-0.4 -0.8
±100
-1
-10
nA
uA
-6
-4
A
38 48
48 58 m
63 78
10 S
-0.85 -1.2 V
8.0 12
0.9 nC
3.0
780
115 pF
55
0.2 0.3
1.0
4.0
1.5
6.0
us
2.0 3.0
www.alfa-mos.com
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Alfa-MOS
Technology
Typical Characteristics
AFP1427
20V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Dec. 2014
www.alfa-mos.com
Page 3

No Preview Available !

Alfa-MOS
Technology
Typical Characteristics
AFP1427
20V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Dec. 2014
www.alfa-mos.com
Page 4

No Preview Available !

Alfa-MOS
Technology
Typical Characteristics
AFP1427
20V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Dec. 2014
www.alfa-mos.com
Page 5