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Bulletin PD-20619 rev. C 12/06
Ultrafast Rectifier
Features
• Two Common-Cathode Diodes
• Ultrafast Reverse Recovery
• Ultrasoft Reverse Recovery Current Shape
• Low Forward Voltage Drop
• Low Leakage Current
• Optimized for Power Conversion: Welding and Industrial SMPS Applications
• Up to 175°C Operating Junction Temperature
70CRU02
trr = 28ns
IF(AV) = 70A
@TC = 145°C
VR = 200V
Description/ Applications
The 70CRU02 integrates two state-of-the-art International Rectifier’s Ultrafast recovery rectifiers in the common-
cathode configuration. The planar structure of the diodes, and the platinum doping life-time control, provide a
Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability charac-
teristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to
be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS,
DC-DC converters. Their extremely optimized stored charge and low recovery current reduce both over-
dissipation in the switching elements (and snubbers) and EMI/RFI.
Absolute Maximum Ratings
Parameters
VR
IF(AV)
IFSM
PD
TJ, TSTG
Cathode to Anode Voltage
Continuous Forward Current TC = 145°C Per Diode
Single Pulse Forward Current TC = 25°C Per Diode
Maximum Power Dissipation TC = 100°C Per Module
Operating Junction and Storage Temperatures
Max
200
35
300
67
- 55 to 175
Units
V
A
W
°C
Case Styles
Base
Common
Cathode
2
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TO-218
1
Anode
1
2
Common
Cathode
3
Anode
2
1

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70CRU02
Bulletin PD-20619 rev. C 12/06
Electrical Characteristics per Diode @ TJ = 25°C (unless otherwise specified)
VBR, Vr
VF
Parameters
Breakdown Voltage,
Blocking Voltage
Forward Voltage
IR Reverse Leakage Current
CT Junction Capacitance
LS Series Inductance
Min Typ Max Units Test Conditions
200 - - V I R = 60μA
- 0.95 1.09 V I F = 35A
- 0.9 1.0 V I F = 35A, TJ = 125°C
- 0.85 0.9 V I F = 35A, TJ = 175°C
- - 60 μA V R = VR Rated
- - 2 mA T J = 150°C, VR = VR Rated
- 50 -
- 10 -
pF V R = 200V
nH Measured from A-lead to K-lead 5mm from
package body
Dynamic Recovery Characteristics per Diode @ TJ = 25°C (unless otherwise specified)
trr
IRRM
Qrr
Parameters
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
Min Typ Max Units Test Conditions
- - 28 ns TJ = 25°C
- 34 -
TJ = 125°C
IF = 1A
VR = 30V
diF /dt = 200A/μs
- 26 -
TJ = 25°C
- 49 -
- 3.7 -
- 8.2 -
TJ = 125°C
A TJ = 25°C
TJ = 125°C
IF = 35A
VRR = 100V
di/dt = 200A/μs
- 48.7 - nC TJ = 25°C
- 202 -
TJ = 125°C
Thermal - Mechanical Characteristics
RthJC
RthJC
RthCS (1)
Wt
Parameters
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Weight
Per Diode
Both Leg
T Mounting Torque
Marking Device
(1) Mounting Surface, Flat, Smooth and Greased
2
Min
-
-
-
-
-
1.2
10
Typ Max
0.8 0.9
- 0.45
0.2 -
5.5 -
0.2 -
- 2.4
- 20
70CRU02
Units
K/W
g
(oz)
N*m
lbf.in
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1000
100
T J= 175˚C
10 T = 125˚C
J
T = 25˚C
J
70CRU02
Bulletin PD-20619 rev. C 12/06
1000
100
10
T J = 175˚C
125˚C
1
25˚C
0.1
0.01
0 50 100 150 200
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
T J = 25˚C
100
1
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
1
10
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
0.1
Single Pulse
(Thermal Resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Diode)
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1
3

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70CRU02
Bulletin PD-20619 rev. C 12/06
180
170
160
150 DC
140
130
120 Square wave (D = 0.50)
110 Rated Vr applied
100
90 see note (3)
80
0 10 20 30 40 50 60
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
80
If = 35A
70 Vrr = 100V
60
50 Tj = 125˚C
40
30 Tj = 25˚C
20
10
0
100 1000
di F /dt (A/μs )
Fig. 7 - Typical Reverse Recovery vs. di F /dt
50
40
30
RMS Limit
20
10
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
0
0 10 20 30 40 50 60
Average Forward Current - I F(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
600
If = 35A
Vrr = 100V
500
400 Tj = 125˚C
300
200
Tj = 25˚C
100
0
100 1000
di F /dt (A/μs )
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
4
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70CRU02
Bulletin PD-20619 rev. C 12/06
VR = 200V
L = 70µH
0.01 Ω
D.U.T.
dif/dt
ADJUST G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test
Circuit
IF
0
3
trr
ta
tb
1 dif /dt
2 I RRM
Q rr 4
0.5 I RRM
di(rec)M/dt
5
0.75 IRRM
1. diF/dt - Rate of change of current through
zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from
zero crossing point of negative going IF to
point where a line passing through 0.75 IRRM
and 0.50 IRRM extrapolated to zero current
4. Qrr - Area under curve defined by
t rr and IRRM
Q
rr
=
t
rr x I
2
RRM
5. di (rec) M / dt - Peak rate of change
of current during t b
portion of t rr
Fig. 10 - Reverse Recovery Waveform and Defini-
tions
Outline Table
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Dimensions in inches (and milimetres)
5