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Bulletin PD-20740 rev. B 02/06
Ultrafast Soft Recovery Diode
80EBU02
Features
• Ultrafast Recovery
• 175°C Operating Junction Temperature
• Screw Mounting Only
• Lead-Free Plating
Benefits
• Reduced RFI and EMI
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
trr = 35ns
IF(AV) = 80Amp
VR = 200V
Description/ Applications
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.
Absolute Maximum Ratings
Parameters
VR
IF(AV)
IFSM
IFRM
TJ, TSTG
Cathode to Anode Voltage
Continuous Forward Current, TC = 112°C
Single Pulse Forward Current, TC = 25°C
Maximum Repetitive Forward Current
Operating Junction and Storage Temperatures
Square Wave, 20kHz
Max
200
80
800
160
- 55 to 175
Units
V
A
°C
Case Styles
Document Number: 93024
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80EBU02
Bulletin PD-20740 rev. B 02/06
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VBR, Vr
VF
Parameters
Breakdown Voltage,
Blocking Voltage
Forward Voltage
IR Reverse Leakage Current
CT Junction Capacitance
LS Series Inductance
Min Typ Max Units Test Conditions
200 - - V IR = 50µA
- 0.98 1.13 V IF = 80A
- 0.79 0.92 V IF = 80A, TJ = 175°C
- - 50 µA VR = VR Rated
- - 2 mA TJ = 150°C, VR = VR Rated
- 89 - pF VR = 200V
- 3.5 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
trr Reverse Recovery Time
IRRM
Peak Recovery Current
Qrr Reverse Recovery Charge
- - 35 ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V
- 32 -
- 52 -
- 4.4 -
TJ = 25°C
TJ = 125°C
A TJ = 25°C
IF = 80A
VR = 160V
diF /dt = 200A/µs
- 8.8 -
TJ = 125°C
- 70 - nC TJ = 25°C
- 240 -
TJ = 125°C
Thermal - Mechanical Characteristics
RthJC
RthCS
Wt
Parameters
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Weight
T Mounting Torque
Mounting Surface, Flat, Smooth and Greased
Document Number: 93024
Min
1.2
10
Typ
0.2
0.18
Max
0.70
5.02
2.4
20
Units
K/W
g
(oz)
N*m
lbf.in
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1000
100
10
T J = 175˚C
T J = 125˚C
T J = 25˚C
80EBU02
Bulletin PD-20740 rev. B 02/06
1000
100
10
T J = 175˚C
125˚C
1
25˚C
0.1
0.01
0.001
0
50 100 150 200
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
10000
1000
T J = 25˚C
100
1
0 0.5 1 1.5 2 2.5
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1
10
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
0.1 D = 0.01
Single Pulse
(Thermal Resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
10
Document Number: 93024
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80EBU02
Bulletin PD-20740 rev. B 02/06
180
160
140 DC
120
100 Square wave (D = 0.50)
80% Rated Vr applied
80
see note (3)
60
0 20 40 60 80 100 120
Average Forward Current - IF(AV)(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
70
IF = 160A
IF = 80A
60 IF = 40A
50
40
30
20 Vr = 160V
Tj = 125˚C
Tj = 25˚C
10
100
di F /dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery time vs. di F /dt
120
RMS Limit
100
80
60 D = 0.01
D = 0.02
40 D = 0.05
D = 0.10
D = 0.20
20 D = 0.50
DC
0
0 20 40 60 80 100 120
Average Forward Current - IF(AV)(A)
Fig. 6 - Forward Power Loss Characteristics
1200
1000
Vr = 160V
Tj = 125˚C
Tj = 25˚C
800 IF = 160A
IF = 80A
IF = 40A
600
400
200
0
100 1000
di F/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1= 80% rated VR
Document Number: 93024
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80EBU02
Bulletin PD-20740 rev. B 02/06
Reverse Recovery Circuit
VR = 200V
L = 70µH
0.01
D.U.T.
AdDifJ/FdU/dtSt T G
D
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
IF
0
3
trr
ta
tb
1 difF/d/dtt
2 I RRM
Q rr 4
0.5 I RRM
di(rec)M/dt
5
0.75 IRRM
1. diF/dt - Rate of change of current through zero
crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from zero
crossing point of negative going IF to point where
a line passing through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by t rr
and IRRM
Q
rr
=
t
rr
xI
2
RRM
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93024
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