80EBU02.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 80EBU02 데이타시트 다운로드

No Preview Available !

80EBU02
Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED PtTM
Cathode
Anode
FEATURES
• Ultrafast recovery
• 175 °C operating junction temperature
• Screw mounting only
• Lead (Pb)-free plating
• Designed and qualified for industrial level
• Compliant to RoHS directive 2002/95/EC
PowerTabTM
PRODUCT SUMMARY
trr
IF(AV)
VR
35 ns
80 A
200 V
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
Continuous forward current
VR
IF(AV)
Single pulse forward current
IFSM
Maximum repetitive forward current
Operating junction and
storage temperatures
IFRM
TJ, TStg
TEST CONDITIONS
TC = 112 °C
TC = 25 °C
Square wave, 20 kHz
MAX.
200
80
800
160
- 55 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
Forward voltage
VBR,
Vr
VF
IR = 50 µA
IF = 80 A
IF = 80 A, TJ = 175 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 200 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
200
-
-
-
-
-
-
TYP.
-
0.98
0.79
-
-
89
3.5
MAX. UNITS
-
1.13
0.92
50
2
-
-
V
µA
mA
pF
nH
Document Number: 93024
Revision: 07-Jul-09
For technical questions, contact: diodestech@vishay.com
www.vishay.com
1

No Preview Available !

80EBU02
Vishay High Power Products Ultrafast Soft Recovery Diode,
80 A FRED PtTM
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr TJ = 25 °C
--
- 32
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 80 A
VR = 160 V
dIF/dt = 200 A/µs
- 52
- 4.4
- 8.8
- 70
- 240
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
Thermal resistance,
junction to heatsink
RthJC
RthCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style PowerTabTM
MIN.
-
-
-
-
1.2
(10)
TYP.
-
MAX.
0.70
0.2 -
- 5.02
0.18 -
2.4
-
(20)
80EBU02
UNITS
K/W
g
oz.
N·m
(lbf · in)
www.vishay.com
2
For technical questions, contact: diodestech@vishay.com
Document Number: 93024
Revision: 07-Jul-09

No Preview Available !

80EBU02
Ultrafast Soft Recovery Diode, Vishay High Power Products
80 A FRED PtTM
1000
100
T J = 175˚C
T J = 125˚C
T J = 25˚C
10
1000
100
10
T J = 175˚C
125˚C
1
25˚C
0.1
0.01
0.001
0
50 100 150 200
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
1000
T J = 25˚C
100
1
0 0.5 1 1.5 2 2.5
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
0.1 D = 0.01
Single Pulse
(Thermal Resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
Document Number: 93024
Revision: 07-Jul-09
For technical questions, contact: diodestech@vishay.com
www.vishay.com
3

No Preview Available !

80EBU02
Vishay High Power Products Ultrafast Soft Recovery Diode,
80 A FRED PtTM
180
160
140
DC
120
100 Square wave (D = 0.50)
80% Rated Vr applied
80
see note (1)
60
0 20 40 60 80 100 120
Average Forward Current - IF(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
70
IF = 160A
IF = 80A
60 IF = 40A
50
40
30
20 Vr = 160V
Tj = 125˚C
Tj = 25˚C
10
100 1000
di F /dt (A/µs )
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
120
RMS Limit
100
80
60 D = 0.01
D = 0.02
40 D = 0.05
D = 0.10
D = 0.20
20 D = 0.50
DC
0
0 20 40 60 80 100 120
Average Forward Current - IF(AV)(A)
Fig. 6 - Forward Power Loss Characteristics
1200
1000
Vr = 160V
Tj = 125˚C
Tj = 25˚C
800 IF = 160A
IF = 80A
IF = 40A
600
400
200
0
100 1000
di F/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
www.vishay.com
4
For technical questions, contact: diodestech@vishay.com
Document Number: 93024
Revision: 07-Jul-09

No Preview Available !

80EBU02
Ultrafast Soft Recovery Diode, Vishay High Power Products
80 A FRED PtTM
VR = 200 V
L = 70 µH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(4) Qrr - area under curve defined by trr
and IRRM
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93024
Revision: 07-Jul-09
For technical questions, contact: diodestech@vishay.com
www.vishay.com
5