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Teccor® brand Thyristors
EV Series 1 Amp Sensitive Triacs
L01 Series
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
1
400 to 800
3 to 10
Additional Information
Unit
A
V
mA
RoHS
Description
New 1 Amp bi-directional solid state switch series offering
direct interface to microprocessor drivers in economical
TO-92 and surface mount packages. The die voltage
blocking junctions are glass-passivated to ensure long term
reliability and parametric stability.
Features
• RoHS compliant and
Halogen-Free
• Bcalopcakbiinligtyv—oltaugpeto(V8D0RM0)V
• Surge capability >
10Amps
• Static dv/dt > 20 Volts/
μsec
• Thru hole and surface
mount packages
Applications
The L01 EV Series is especially designed for white goods
applications such as valve controls in washing machines as
well as replacement of mechanical and hybrid relays where
long life is required.
Schematic Symbol
MT2
Datasheet
Resources
Samples
Absolute Maximum Ratings
Symbol
IT(RMS)
Parameter
RMS on-state current
(full sine wave)
ITSM
Non repetitive surge peak on-state current
(Single cycle, TJ initial = 25°C)
I2t I2t Value for fusing
di/dt
Critical rate of rise of on-state current IG = 2 x IGT
IGTM
PG(AV)
Tstg
TJ
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/02/16
TO-92
SOT-223
TO-92
SOT-223
tp = 10 ms
tp = 8.3 ms
TO-92
SOT-223
tp = 10 μs
G
MT1
TC = 50°C
TL = 90°C
F = 50 Hz
F = 60 Hz
F = 50 Hz
F = 60 Hz
TJ = 125°C
TJ = 125°C
TJ = 125°C
Value
1.0A
10
12
0.50
0.59
20
1
0.1
-40 to 150
-40 to 125
Unit
A
A
A2s
A/μs
A
W
°C
°C

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Teccor® brand Thyristors
EV Series 1 Amp Sensitive Triacs
Electrical Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Description
IGT
VGT
IH
dv/dt
(dv/dt)c
DC Gate Trigger Current
DC Gate Trigger Voltage
Holding Current
Critical Rate-of-Rise of
Off-State Voltage
Critical
Rate-of-Rise of
Commutating Voltage
Tgt Turn-On Time
Note: x = voltage, y = package
Test
Conditions
Quadrant
RVLD==6102VΩ
I – II – III
IV
ALL
Gate Open
ExponTeVJnD=t=ia1lV1W0DR°aMCveform
Gate Open
(di/dt)c = 0.54A/ms
TJ = 110°C
PIGW=
25mA
= 15μs
IT = 1.2A (pk)
Limit
MAX.
MAX.
MAX.
MIN.
MIN.
MAX.
L0103xy
3
5
7
Value
L0107xy
5
7
1.3
10
L0109xy
10
10
10
10 20 50
0.5 1.0 2.0
2.0 2.0 2.0
Static Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
VTM
IDRM
Description
Peak On-State Voltage
Off-State Current, Peak Repetitive
Test Conditions
ITM = 1.4A (pk)
VD= VDRM TJ = 25°C
VD= VDRM TJ = 125°C
Limit
MAX
MAX
Value
1.60
5
500
Unit
mA
V
mA
V/μs
V/μs
μs
Unit
V
μA
μA
Thermal Resistances
Symbol
Description
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
1 60Hz AC resistive load condition, 100% conduction.
Test Conditions
IT
=
1.0A
1
(RMS)
TO-92
SOT-223
IT
=
1.0A
1
(RMS)
TO-92
SOT-223
Value
50
23
100
55
Unit
°C/W
°C/W
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/02/16

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Teccor® brand Thyristors
EV Series 1 Amp Sensitive Triacs
Figure 1: Definition of Quadrants
ALL POLARITIES ARE REFERENCED TO MT1
MT2 POSITIVE
MT2 (Positive +Half Cycle)
MT2
(-) I GT
GATE
-I G T
MT1
REF
MT2
(+) I GT
GATE
MT1
QII QI
QIII QIV
REF
MT2
+ IGT
(-) I GT
GATE
(+) I GT
GATE
-MT1
REF MT2 NEGATIVE
(Negative Half Cycle)
MT1
REF
Figure 3: Normalized DC Holding Current
vs. Junction Temperature
3.0
INITIAL ON-STATE CURRENT = 100mA (DC)
2.5
2.0
1.5
1.0
0.5
0.0
-55
-40
-15 +5 +25 +45 +65 +85
Junction Temperature (TJ)- ºC
+105 +125
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
2.00
1.75
1.50
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
1.25
1.00
0.75
0.50
0.25
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
RMS On-state Current [IT(RMS)] - Amps
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/02/16
Figure 2: N ormalized DC Gate Trigger Current for
All Quadrants vs. Junction Temperature
3.0
2.0
1.0
0.0
-40
-15 +25 +65
Junction Temperature (TJ)- ºC
+105 +125
Figure 4: N ormalized DC Gate Trigger Voltage for
All Quadrants vs. Junction Temperature
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.0
-55 -40
-15 +5 +25 +45 +65 +85
Junction Temperature (TJ)- °C
+105 +125
Figure 6: M aximum Allowable Case Temperature
vs. On-State Current
130
125
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
120
SOT-223
CONDUCTION ANGLE: 360°
CASE TEMPERATURE: Measured as
110 shown on dimensional drawings
100
90
80 TO-92
70
60
50
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
RMS On-state Current [IT(RMS)] - Amps

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Teccor® brand Thyristors
EV Series 1 Amp Sensitive Triacs
Figure 7: Surge Peak On-State Current vs. Number of Cycles
20
Supply Frequency: 60Hz Sinusoidal
15 Load: Resistive
12
10
RMS
Case
On-State Current
Temperature
[IT(RMS)]:
Max
Rated
Value
at
Specific
9
8
Notes:
7 1. Gate control may be lost during and immediately
6 following surge current interval.
5 2. Overload may not be repeated until junction
temperature has returned to steady-state rated value.
4
3 1 A Devices
2
1
1
2 3 4 5 6 7 8 9 10
20 30 40 60 80 100
200 300 400 600 1 000
Surge Current Duration – Full Cycle
Soldering Parameters
Reflow Condition
Pb – Free assembly
- Temperature Min (Ts(min))
Pre Heat - Temperature Max (Ts(max))
- Time (min to max) (ts)
Average ramp up rate (LiquidusTemp)
(TL) to peak
TS(max) to TL - Ramp-up Rate
Reflow
-Temperature (TL) (Liquidus)
- Time (min to max) (ts)
Peak Temperature (TP)
Time within 5°C of actual peak
Temperature (tp)
Ramp-down Rate
Time 25°C to peakTemperature (TP)
Do not exceed
150°C
200°C
60 – 180 secs
5°C/second max
5°C/second max
217°C
60 – 150 seconds
260+0/-5 °C
20 – 40 seconds
5°C/second max
8 minutes Max.
280°C
TP
TL
TS(max)
TS(min)
25
Ramp-up
Preheat
tS
time to peak temperature
tP
tL
Ramp-down
Time
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/02/16

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Teccor® brand Thyristors
EV Series 1 Amp Sensitive Triacs
Physical Specifications
Terminal Finish
Body Material
Lead Material
100% Matte Tin-plated.
UL recognized epoxy meeting flammability
classification 94V-0.
Copper Alloy
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of the Thyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
Environmental Specifications
Test
AC Blocking
Temperature Cycling
Temperature/
Humidity
High Temp Storage
Low-Temp Storage
Resistance to
Solder Heat
Solderability
Lead Bend
Specifications and Conditions
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
1008 hours; -40°C
MIL-STD-750 Method 2031
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
Dimensions — TO-92 (E Package)
A
TC MEASURING POINT
B
SEATING
PLANE
C
GATE
G
MT1
H
I
D
MT2
J FE
F
Dimensions
A
B
C
D
E
F
G
H
I
J
Inches
Min Max
0.175
0.205
0.170
0.210
0.500
0.135
0.125
0.165
0.080
0.105
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
Millimeters
Min Max
4.450
5.200
4.320
5.330
12.70
3.430
3.180
4.190
2.040
2.660
0.407
0.533
1.150
1.390
2.420
2.660
0.380
0.500
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/02/16