SSC8121GN1.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 SSC8121GN1 데이타시트 다운로드

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SSC8121GN1
P-Channel Enhancement Mode MOSFET
Features
VDS VGS RDSon TYP
ID
150mR@-4V5
-20V ±8V 190mR@-2V5 -1.0A
255mR@-1V8
General Description
This device is produced with high cell density DMOS trench
technology, which is especially used to minimize on-state
resistance. This device particularly suits low voltage
applications such as portable equipment, power management
and other battery powered circuits, and low in-line power
dissipation are needed in a very small outline surface mount
package. Excellent thermal and electrical capabilities.
Package Information
Applications
Load Switch
Portable Devices
DCDC conversion
Pin Configuration
Top View
Bottom View
G
D
S
Ordering Information
Device
SSC8121GN1
DFN1006
Package
DFN1006
Marking
K
SSC-1V0
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Qty Per Reel
10000
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SSC8121GN1
Absolute Maximum Ratings @TA=25unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a VGS@4.5V TA = 25°C
Continuous Drain Current a VGS@4.5V TA = 70°C
Drain Current (Pulse)b
Power Dissipation a TC = 25°C
Power Dissipation a TC = 70°C
Storage and Junction Temperature Range
Symbol
VDSS
VGSS
ID
IDM
PD
TJ//TSTG
Ratings
-20
±8
-1.0
-0.7
-5
0.9
0.5
-55~150
Unit
V
V
A
A
A
W
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to- Ambient C
t10S
Steady-State
t10S
Steady-State
Symbol
RJA
RJA
Typ
80
106
197
275
Max
101
138
242
332
Units
°C/W
°C/W
°C/W
°C/W
Electrical Characteristics @TA=25unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source On-state Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Feedback Capacitance
Symbol
Test Conditions
OFF CHARACTERISTICS
V(BR)DSS
VGS = 0V, ID=-250uA
IDSS VDS = -20 V , VGS = 0V
IGSS VGS =±8 V , VDS = 0V
ON CHARACTERISTICS
VGS(th )
ID = -250 uA , VDS = VGS
VGS = -4.5V ,ID = -0.45A
RDS(on)
VGS = -2.5V , ID = -0.35A
VGS = -1.8V , ID = -0.25A
gFS VDS = -5V, ID = -1.4A
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
VDS = -6V , VGS = 0V
f = 1 MHz
SWITCHING CHARACTERISTICS
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Min Typ Max Unit
-20 -- -- V
-- -- -1 uA
--
--
±100
nA
-0.45
--
--
--
-0.75
150
190
255
6.5
-1.5
350
450
700
--
V
mR
mR
mR
S
-- 376 --
-- 187 --
-- 78 --
pF
pF
pF
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SSC8121GN1
Turn-on Delay Time
Turn-off Delay Time
td ( on )
td( off )
VDD = -6V , RL = 6R,ID = -1.0A,
VGEN = -4.5V, RG = 6R
--
--
13 25 ns
42 70 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
Is = -1 A, VGS = 0V
-0.5 -- -1.2 V
Notes:
a: mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
b: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
c: mounted on FR-4 minimum pad board, in a still air environment with T A =25°C.
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Typical Performance Characteristics
10
-V =3.0, 3.5, 4.0, 4.5, 5.0V
GS
-V =2.5V
8 GS
6 -V =2.0V
GS
4 -V =1.8V
GS
2
-V =1.5V
GS
-V =1.0V
0 GS
012345
-V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
700
600
500
Ciss Ave(pF)
400
300
200 Coss Ave(pF)
100
0
0
Crss Ave(pF)
5 10 15
-V , Drain-to-Source Voltage (V)
DS
Figure 3. Capacitance
20
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-100
-50 0
Tj, Junction
50 100
Temperature
(1oC50)
200
Figure 5. Gate Thershold Vs. Temperature
SSC8121GN1
10 -55oC 25oC 85oC 125oC 150oC
8
6
4
2
-V =1.0V
0 DS
0 2 4 6 8 10
-V , Gate-to-source Voltage(V)
GS
Figure 2. Transfer Characteristics
550
VGS= -1.8V, ID= -0.3A
500
450
400
VGS= -2.5V, ID= -0.5A
350
300
VGS= -4.5V, ID= -1A
250
200
-25
0
25 50 75 100 125
Tj Junction Temperature (oC)
Fig5. On-resistance vs. Temperature
10
1
0.1
0.0 0.5 1.0 1.5 2.0
-V , Body Diode Forward Voltage (V)
SD
Figure 6. Body Diode Forward Voltage
Vs. Source Current
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SSC8121GN1
DISCLAIMER
AFSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AFSEMI DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT
DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICIENCE UNDER ITS PATENT RIGHTS, NOR
THE RIGHTS OF OTHERS.
THE GRAPHS PROVIDED IN THIS DOCUMENT ARE STATISTICAL SUMMARIES BASED ON A LIMITED
NUMBER OF SAMPLES AND ARE PROVIDED FOR INFORMATIONAL PURPOSE ONLY. THE
PERFORMANCE CHARACTERISTICS LISTED IN THEM ARE NOT TESTED OR GUARANTEED. IN SOME
GRAPHS, THE DATA PRESENTED MAY BE OUTSIDE THE SPECIFIED OPERATING RANGE (E.G,.
OUTSIDE SPECIFIED POWER SUPPLY RANGE ) AND THEREFORE OUTSIDE THE WARRANTED
RANGE.
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