60N60C2.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 60N60C2 데이타시트 다운로드

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Advance Technical Data
HiPerFASTTM IGBT
C2-Class High Speed IGBTs
IXGH 60N60C2
IXGT 60N60C2
VCES
IC25
VCE(sat)
tfi typ
= 600 V
= 75 A
= 2.5 V
= 35 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10
Clamped inductive load @ 600V
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (TO-247)
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
60 A
300 A
ICM = 100
A
480
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 50 A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.0 5.0 V
TJ = 25°C
TJ = 150°C
TJ = 25°C
TJ = 125°C
50 µA
1 mA
±100 nA
2.1 2.5 V
1.8 V
TO-247 AD
(IXGH)
TO-268
(IXGT)
G
CE
G
E
C (TAB)
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z Very high frequency IGBT
z Square RBSOA
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
© 2003 IXYS All rights reserved
DS99043A(09/03)

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Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 50 A; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2
Inductive load, TJ = 125°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2
(TO-247)
40 58
S
3900
280
97
pF
pF
pF
146 nC
28 nC
50 nC
18
25
95
35
0.48
ns
ns
150 ns
ns
0.8 mJ
18
25
0.45
130
80
1.2
ns
ns
mJ
ns
ns
mJ
0.26 K/W
0.25
K/W
IXGH 60N60C2
IXGT 60N60C2
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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100
90
80
70
60
50
40
30
20
10
0
0.5
Fig. 1. Output Characteristics
@ 25 Deg. C
VGE = 15V
13V
11V
9V
7V
5V
1 1.5
2 2.5 3 3.5
VCE - Volts
100
90
80
70
60
50
40
30
20
10
0
0.5
Fig. 3. Output Characteristics
@ 125 Deg. C
VGE = 15V
13V
11V
9V
7V
5V
1 1.5
2 2.5 3 3.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
5
4.5 T J = 25º C
4
3.5
3
2.5 I C = 100A
2 50A
1.5 25A
1
5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
© 2003 IXYS All rights reserved
IXGH 60N60C2
IXGT 60N60C2
Fig. 2. Extended Output Characteristics
@ 25 deg. C
200
VGE = 15V
175 13V
11V 9V
150
125
100
75 7V
50
25
0
1
1.5
5V
2 2.5 3 3.5 4 4.5
VCE - Volts
Fig. 4. Temperature Dependence of VCE(sat)
1.2
1.1
VGE = 15V
1
I C= 100A
0.9
0.8 I C= 50A
0.7
I C= 25A
0.6
0.5
25
50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Input Admittance
200
175
150
125
100
75
50
TJ = 125º C
25º C
25 -40º C
0
3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5
VGE - Volts

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IXGH 60N60C2
IXGT 60N60C2
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 7. Transconductance
TJ = -40º C
25º C
125º C
25 50 75 100 125 150 175 200
I C - Amperes
Fig. 9. Dependence of Eoff on IC
5
R G= 2 Ohms
RG = 10 Ohms - - - - -
4 VGE = 15V
VCE = 400V
3
TJ = 125 ºC
2
TJ = 25 ºC
1
0
20 30 40 50 60 70 80 90 100
I C - Amperes
Fig. 11. Gate Charge
15
VCE = 300V
12
I C= 50A
I G= 10mA
9
6
3
Fig. 8. Dependence of Eoff on RG
6
TJ = 125º C
5 VGE = 15V
VCE = 400V
4
3
I C = 100A
I C= 75A
2 I C = 50A
1 I C= 25A
0
2 4 6 8 10 12 14 16
R G - Ohms
Fig. 10. Dependence of Eoff on Temperature
5
R G = 2 Ohms
R G= 10 Ohms - - - - -
4 VGE = 15V
VCE = 400V
3
I C = 100A
I C = 75A
2
I C = 50A
1
0
25
I C = 25A
50 75 100
TJ - Degrees Centigrade
125
10000
1000
100
Fig. 12. Capacitance
f = 1M Hz
Cies
Coes
Cres
0
0 20 40 60 80 100 120 140 160
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
10
0
5 10 15 20 25 30 35 40
VCE - Volts
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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0 .3
0 .25
0 .2
0 .15
0 .1
0 .05
1
IXGH 60N60C2
IXGT 60N60C2
F ig . 13. M aximum Transient Th ermal Resistance
10
Puls e W idth - millis ec onds
10 0
10 0 0
© 2003 IXYS All rights reserved