K1317.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 K1317 데이타시트 다운로드

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2SK1317
Silicon N Channel MOS FET
Application
High speed power switching
Features
High breakdown voltage VDSS = 1500 V
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
G
REJ03G0929-0200
(Previous: ADE-208-1268)
Rev.2.00
Sep 07, 2005
D
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6

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2SK1317
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
1500
2.0
0.45
Typ
9
0.75
990
125
60
17
70
110
60
0.9
1750
Ratings
1500
±20
2.5
7
2.5
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±1
500
4.0
12
Unit
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 1200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 15 V *3
S ID = 1 A, VDS = 20 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 2 A, VGS = 10 V,
ns RL = 15
ns
ns
V IF = 2 A, VGS = 0
ns IF = 2 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6

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2SK1317
Main Characteristics
Power vs. Temperature Derating
120
80
40
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
5
Pulse Test
4
15 V
10 V
8V
7V
3
6V
2
5V
1
VGS = 4 V
0 20 40 60 80 100
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
Pulse Test
40
ID = 3 A
30
20 2 A
1A
10
0.5 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
10
3
1.0
0.3
0.1
0.03
DC OPpWer=at1io0nm(TsC1(m1=1sS205h0°o1µCt0)s)µs
Operation in this area
is limited by RDS (on)
Ta = 25°C
0.01
10 30 100 300 1,000
3,000
10,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
2.0
1.6
VDS = 20 V
Pulse Test
1.2
0.8 75°C
TC = 25°C
0.4 –25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
20
VGS = 10 V
15 V
10
5
2
Pulse Test
1.0
0.5
0.1 0.2
0.5 1.0 2
5
Drain Current ID (A)
10

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2SK1317
Static Drain to Source on State
Resistance vs. Temperature
20
16
VGS = 15 V
Pulse Test
ID = 2 A
0.5 A, 1 A
12
8
4
0
–40 0
40 80 120 160
Case Temperature TC (°C)
5,000
Body to Drain Diode Reverse
Recovery Time
2,000
1,000
500
200 di/dt = 100 A/µs, Ta = 25°C
VGS = 0
100 Pulse Test
50
0.05 0.1 0.2
0.5 1.0 2
5
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
1,000
20
800
600
VDS
VDD = 250 V
400 V
600 V
VGS
16
12
400 8
VDD = 600 V
200 400 V
4
250 V
ID = 2.5 A
0
0 20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
10
VDS = 20 V
5 Pulse Test
2 –25°C
Ta = 25°C
1.0 75°C
0.5
0.2
0.1
0.05 0.1 0.2
0.5 1.0 2
Drain Current ID (A)
5
10,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
100 Coss
Crss
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
1,000
500
Switching Characteristics
VGS = 10 V
VDD
=
30
V
PW = 2 µs, duty < 1%
td (off)
200
100
tf
50
tr
20 td (on)
10
0.05 0.1 0.2
0.5 1.0 2
Drain Current ID (A)
5
Rev.2.00 Sep 07, 2005 page 4 of 6

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2SK1317
Reverse Drain Current vs.
Source to Drain Voltage
5
Pulse Test
4
3
2
1
10 V, 15 V
VGS = 0, –5 V
0
0 0.4 0.8 1.2 1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0 D = 1
0.5
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03 10S.0h1ot Pulse
0.01
10 µ 100 µ
θch–c (t) = γS (t) • θch–c
θch–c = 1.25°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Vin Monitor
Vout Monitor
Vin
10 V
50
D.U.T
RL
VDD
= 30 V
Waveforms
90%
Vin 10%
Vout 10%
10%
td (on)
90%
tr
90%
td (off)
tf
Rev.2.00 Sep 07, 2005 page 5 of 6