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IGP01N120H2
IGD01N120H2
HighSpeed 2-Technology
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
PG-TO-220-3-1
Qualified according to JEDEC2 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-252-3-1
Type
IGP01N120H2
IGD01N120H2
VCE
IC
Eoff
Tj
1200V 1A 0.09mJ 150°C
1200V 1A 0.09mJ 150°C
Marking
G01H1202
G011HH11220022
Package
PG-TO-220-3-1
PG-TO-252-3-11
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature
PG-TO-252: Reflow soldering, MSL3
Others: wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
3.2
1.3
3.5
3.5
±20
28
-40...+150
260
260
Unit
V
A
V
W
°C
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.4 Sept. 07

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IGP01N120H2
IGD01N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
Symbol
RthJC
RthJA
RthJA
Conditions
PG-TO-220-3-1
PG-TO-252-3-1
Max. Value
4.5
62
50
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
Ciss
Coss
Crss
QGate
LE
VGE=0V, IC=300µA
VGE = 15V, IC=1A
Tj=25°C
Tj=150°C
VGE = 10V, IC=1A,
Tj=25°C
IC=30µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=1A
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=1A
VGE=15V
min.
1200
-
-
-
2.1
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
- -V
2.2 2.8
2.5 -
2.4 -
3 3.9
µA
- 20
- 80
- 40 nA
0.75 - S
91.6
- pF
9.8 -
3.4 -
8.6 - nC
7 - nH
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
Power Semiconductors
2
Rev. 2.4 Sept. 07

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IGP01N120H2
IGD01N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=800V,
IC=1A,
VGE=15V/0V,
RG=241,
Lσ2)=180nH,
Cσ2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
13
6.3
370
28
0.08
0.06
0.14
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=800V,
IC=1A,
VGE=15V/0V,
RG=241,
Lσ2)=180nH,
Cσ2)=40pF
Energy losses include
“tail” and diode 4)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
12
8.9
450
43
0.11
0.09
0.2
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Energy ZVT, Inductive Load
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off energy
Eoff VCC=800V,
IC=1A,
VGE=15V/0V,
RG=241,
Cr2)=1nF
Tj=25°C
Tj=150°C
min.
Value
Typ.
Unit
max.
mJ
- 0.02 -
- 0.044 -
2
4)
) Leakage inductance Lσ and stray capacity Cσ due
Commutation diode from device IKP01N120H2
to
dynamic
test
circuit
in
figure
E
Power Semiconductors
3
Rev. 2.4 Sept. 07

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IGP01N120H2
IGD01N120H2
5A
Ic
4A
3A
TC=80°C
2A
TC=110°C
1A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 241)
10A
1A
tp = 1 µs
2µs
5µs
0,1A
20µs
50µs
200µs
,01A
DC
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj 150°C)
30W
25W
20W
15W
10W
5W
0W
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 150°C)
4A
3A
2A
1A
0A
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150°C)
Power Semiconductors
4
Rev. 2.4 Sept. 07

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IGP01N120H2
IGD01N120H2
5A
4A
VGE=15V
12V
3A 10V
8V
6V
2A
1A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
5A
4A Tj=+150°C
Tj=+25°C
3A
2A
1A
0A
3V 5V 7V 9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
5A
4A
VGE=15V
12V
3A 10V
8V
6V
2A
1A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
4V
IC=2A
3V
IC=1A
2V
IC=0.5A
1V
0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.4 Sept. 07