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Description
The G1003A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
It is ESD protected.
General Features
VDS = 100V,ID = 5A
RDS(ON) < 145m@ VGS=10V (Typ:135 m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
G1003A
D
G
S
Schematic diagram
SOT23-3L view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
5
24
3
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
41.7 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250µA
Zero Gate Voltage Drain Current
IDSS VDS=80V, VGS=0V
Min Typ Max Unit
100 105
--
-
800
V
nA
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Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
G1003A
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VGS=±20V,VDS=0V
VDS=VGS,ID=250µA
VGS=10V, ID=5A -
VDS=5V,ID=2.9A
- - ±30 uA
1 23
V
135 145
m
-8
-
S
VDS=25V,VGS=0V,
F=1.0MHz
- 690
- 120
- 90
-
-
-
PF
PF
PF
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
VDS=30V,ID=3A,
VGS=10V
- 11
- 7.4
- 35
- 9.1
- 15.5
- 3.2
- 4.7
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=6A
- - 1.2
--
6
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
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Test Circuit
1EAS test circuit
2Gate charge test circuit
3Switch Time Test Circuit
G1003A
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G1003A
Typical Electrical and Thermal Characteristics (curves)
Figure1. Source-Drain Diode Forward Voltage
Figure2. Safe operating area
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
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Figure7. BVDSS vs Junction Temperature
G1003A
Figure8. VGS(th) vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
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