K1520.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 K1520 데이타시트 다운로드

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2SK1519, 2SK1520
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (trr = 120 ns)
Suitable for motor control, switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
G
1
23
REJ03G0948-0300
(Previous: ADE-208-1288)
Rev.3.00
Apr 27, 2006
D
1. Gate
2. Drain
3. Source
S
Rev.3.00 Apr 27, 2006 page 1 of 6

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2SK1519, 2SK1520
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1519
2SK1520
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Drain to source
2SK1519
breakdown voltage
2SK1520
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain 2SK1519
current
2SK1520
Gate to source cutoff voltage
Static drain to source on 2SK1519
state resistance
2SK1520
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
450
500
±30
2.0
15
Typ
0.11
0.12
25
5800
1550
170
65
170
415
200
1.1
120
Ratings
450
500
±30
30
120
30
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
0.15
0.16
(Ta = 25°C)
Unit Test conditions
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
ID = 15 A, VGS = 10 V *3
S ID = 15 A, VDS = 10 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 15 A, VGS = 10 V,
ns RL = 2
ns
ns
V IF = 30 A, VGS = 0
ns IF = 30 A, VGS = 0,
diF/dt = 100 A/µs
Rev.3.00 Apr 27, 2006 page 2 of 6

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2SK1519, 2SK1520
Main Characteristics
Power vs. Temperature Derating
300
200
100
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
50
10 V
40
6 V Pulse Test
5V
30
4.5 V
20
10 VGS = 4 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
ID = 50 A
6
4
20 A
2 10 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Rev.3.00 Apr 27, 2006 page 3 of 6
Maximum Safe Operation Area
1,000
300
100
30
10
3
OpiselriamtiiotendinbytDhRiCsDaOSre(poaPne) Wrati=on10(Tms1(1m1S0s0h1o0µts)µs
1 C = 25°C)
0.3
Ta = 25°C
0.1
1 3 10
2SK1519
2SK1520
30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
TC = 75°C
25°C
10 –25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
0.2
VGS = 10 V, 15 V
0.1
0.05
2
5 10 20 50 100 200
Drain Current ID (A)

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2SK1519, 2SK1520
Static Drain to Source on State
Resistance vs. Temperature
0.5
0.4
VGS = 10 V
Pulse Test
0.3
ID = 50 A
20 A
0.2
10 A
0.1
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
1,000
500
di/dt = 100 A/µs, VGS = 0
Pulse Test
200
100
50
20
10
0.5 1
2
5 10 20 50
Reverse Drain Current IDR (A)
1,000
Dynamic Input Characteristics
20
800
VDD = 100 V
250 V
400 V
600
400 VDS
VGS
16
12
8
200
VDD = 400 V
250 V
ID = 30 A
Pulse Test
4
100 V
0
0 80 160 240 320 400
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
100
VDS = 10 V
50 Pulse Test
20 TC = –25°C
10
25°C
75°C
5
2
1
0.5 1
2
5 10 20
Drain Current ID (A)
50
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
100
VGS = 0
f = 1 MHz
10
0 10 20
Crss
30 40
50
Drain to Source Voltage VDS (V)
1,000
500
200
100
50
Switching Characteristics
td (off)
tf
tr
td (on)
20
VGS
duty
=
<
110%V, ,VPDWD =..=320
µs
V
10
0.5 1 2
5 10
20
Drain Current ID (A)
50
Rev.3.00 Apr 27, 2006 page 4 of 6

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2SK1519, 2SK1520
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
30
20
10 VGS = 0, –5 V
10 V
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
3
1 D=1
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3 0.2
0.1
0.1
0.05
0.02
0.03
0.01
1 Shot
Pulse
0.01
10 µ
100 µ
θch–c (t) = γS (t) • θch–c
θch–c = 0.625°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50
D.U.T
Vout Monitor
RL
V=..D3D0 V
Waveforms
90%
Vin 10%
Vout 10%
td (on)
90%
tr
90%
td (off)
10%
tf
Rev.3.00 Apr 27, 2006 page 5 of 6