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SLG55596A
USB Host Charger Identification
Analog Switches
General Description
The SLG55596A is a USB device that combines high speed
USB switches with a USB host charger (dedicated charger)
identification circuit. The device supports both the latest USB
Battery Charging Specification Revision 1.2 including data
contact detection and a set resistor bias for Apple* compliant
devices as well as legacy USB D+/D- short detection using
data line pull-up.
The SLG55596A can also support CDP mode (FAST charging
and data communication available mode if smartphone can
support CDP mode).
The SLG55596A can also support low speed / full speed
mouse/keyboard wake-up from S3 mode.
Features
• High Speed USB Switching
• Low 4.0pF (typ) On Capacitance
• Low 4.0Ω (typ) On Resistance
• Low 0.5Ω (typ) On Resistance Flatness
• 4.5V to 5.5V Supply Range
• Low Supply Current
• Automatic Current-Limit Switch Control
• Automatic USB Charger Identification Circuit
• CDP Support (active USB 2.0 data communication with
1.5A charging)
• Apple iPad* @ 2.4A charging current support
• Automatic CDP/SDP mode support with SMART-CDP=1
for "Always Data Communication"
• Chinese Telecom Standard YD/T 1591-2009 specification
support
• Samsung Galaxy Tab** charge scheme support
• Pb-Free / RoHS Compliant / Halogen-Free
• TDFN-8 Package
Block Diagram
VDD
Pin Configuration - SLG55596A
CEN
DM
DP
SMART-CDP
1
2
3
4
8 CB
7 TDM
6 TDP
5 VDD
TDFN-8
Thermal Pad
connected to GND
(Top View)
* Apple iPhone, iPad and iPod are trademarks of Apple Inc., registered in the
U.S. and other countries.
** Samsung Galaxy Tab are trademarks of Samsung Electronics, registered in
Korea and other countries.
TDM
TDP
SMART-CDP
Resistor
Divider
Resistor
Divider
+
VREF1
-
-
VREF1
+
FSM Logic
One Shot
-
VREF2
+
DM
DP
CEN
FET
CB
Silego Technology, Inc.
000-0055596-10
Rev 1.0
Revised April 22, 2014

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SLG55596A
Pin Description - SLG55596A
Pin #
1
2
3
4
5
6
7
8
9
Pin Name
CEN
DM
DP
SMART-CDP
VDD
TDP
TDM
CB
Thermal Pad
Type
Output
Input/Output
Input/Output
Input
PWR
Input/Output
Input/Output
Input
GND
Pin Description
N-FET Open Drain Output. Current Limit Switch (CLS) Control Output. CB
changes from 0 to 1 or 1 to 0. CEN will be low for 2 seconds (typ)
USB Connector D-
USB Connector D+
Input Control logic (see truth table)
Power Supply. Connect a 0.1μF capacitor between VDD and GND as close
as possible to the device.
Host USB Transceiver D+ Connection
Host USB Transceiver D- Connection
Switch Control Bit
0 = autodetection charger identification active
1 = charging downstream port with active USB2.0 data communication
mode with 1.5A support
Ground
Truth Table
CB SMART-CDP Function
0 0 or 1 DCP autodetect with mouse/keyboard wakeup (Pin 4 = 0 or 1)
1 0 S0 charging with SDP only
S0 charging with CDP or SDP only (depending on external device)
1 1 And, when Non-CDP phone is plugged in, the CDP mode will be changed automatically to SDP
mode during handshaking protocol for supporting data communication.
Ordering Information
Part Number
SLG55596AV
SLG55596AVTR
Type
TDFN-8
TDFN-8 - Tape and Reel
000-0055596-10
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SLG55596A
Absolute Maximum Ratings
Parameter
Min.
Max.
Unit
Supply Voltage
-0.3 6.0
V
Continuous Current into any terminal
-30 +30 mA
Continuous Power Dissipation
-- 954 mW
Operating Temperature Range
-40 85 °C
Junction Temperature
150 °C
Storage Temperature Range
-65 150 °C
Lead Temperature (Soldering, 10s)
260 °C
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Electrical Characteristics - Power Supply
VDD = 4.5V to 5.5V, TA = 25°C (unless specified otherwise)
Parameter Description
Condition/Note
VDD Power Supply Range
VCB > VIH
VCB = 0V
CB = LOW, SMART-CDP = X
(autodetect with wakeup)
IDD
Supply Current
VDD = 5V
CB = HIGH, SMART-CDP =
LOW (SDP)
CB = HIGH, SMART-CDP =
HIGH (CDP)
Min.
4.5
4.75
--
--
--
Typ.
5.0
--
140
20
30
Max.
5.5
5.25
160
30
50
Unit
V
V
μA
μA
μA
Electrical Characteristics - Analog Switch
VDD = 4.5V to 5.5V, TA = 25°C (unless specified otherwise)
Parameter Description
Condition/Note
VDP, VDM
RON
ΔRON
RFLAT
RSHORT
ITDPOFF,
ITDMOFF
IDPON,
IDMON
Analog signal Range
On Resistance TDP/TDM Switch
VDD = -0.4V to 0.4V, I = 10mA
VDP = VDM = 0V to 3.3V
VDD= 5V
On Resistance Match between channels
TDP/TDM Switch
VDD = 5.0V
VDP = VDM = 400mV
IDP = IDM = 10mA
On Resistance flatness TDP/TDM
Switch
VDD = 5.0V
VDP = VDM = 0V to VDD
IDP = IDM = 10mA
On Resistance of TDP/TDM Short
VCB = 0V
VDP = 1V
IDP = IDM = 10mA
Off-Leakage Current
VDD = 3.6V
VDP = VDM = 0.3V to 3.3V
VTDP = VTDM = 3.3V to 0.3V
VCB = 0V
Off-Leakage Current
VDD = 3.6V
VDP = VDM = 3.3V to 0.3V
VCB = VDD
000-0055596-10
Min.
0
--
--
--
--
--
-250
-250
Typ.
--
3.5
4.0
0.1
0.5
50
--
--
Max.
VDD
--
7
Unit
V
Ω
Ω
-- Ω
-- Ω
70 Ω
250 nA
250 nA
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SLG55596A
Electrical Characteristics - Dynamic Performance
VDD = 4.5V to 5.5V, TA = 25°C (unless specified otherwise)
Parameter Description
Condition/Note
TON Turn On Time
TOFF
Turn Off Time
TPLH, TPHL TDP/TDM Switch Propagation Delay
TSKEW Output Skew
COFF
CON
BW
TDP/TDM Off-Capacitance
DP/DM On-Capacitance
-3dB Bandwidth
VISO
Off-Isolation
VTDP or VTDM = 1.5V
RL = 300Ω
CL = 35pF
VTDP or VTDM = 1.5V
RL = 300Ω
CL = 35pF
RL = RS = 50Ω
Skew between DP and DM when
connected to TDP and TDM
RL = RS = 50Ω
f = 1MHz
f = 240MHz
RL = RS = 50Ω
VTDP, VDP = 0dBm
RL = RS =5 0Ω
f = 250MHz
VCT Crosstalk
VTDP, VDP = 0dBm
RL = RS = 50Ω
f = 250MHz
Min.
--‘
--‘
--
--
--‘
--‘
--
--
--
Typ.
20
1
60
40
2.0
4.0
1000
-20
-25
Max.
100
5
--
--
--
5.5
--
--
--
Unit
μs
μs
ps
ps
pF
pF
MHz
dB
dB
Electrical Characteristics - Internal Resistors
VDD = 4.5V to 5.5V, TA = 25°C (unless specified otherwise)
Parameter Description
Condition/Note
RPD
RTRP
RRP
RTRM
RRM
DP/DM Short Pull-down
RP1/RP2 Ratio
RP1 + RP2 Resistance
RM1/RM2 Ratio
RM1 + RM2 Resistance
Min.
350
0.8544
69.75
0.8544
69.75
Typ.
500
0.863
93.0
0.863
93.0
Max.
700
0.872
115.18
0.872
115.18
Unit
kΩ
Ratio
kΩ
Ratio
kΩ
Electrical Characteristics - Logic Input CB
VDD = 4.5V to 5.5V, TA = 25°C (unless specified otherwise)
Parameter Description
Condition/Note
Min. Typ. Max. Unit
VIH CB Input Logic High
VIL CB Input Logic Low
IIN CB Input Leakage Current
1.4 -- -- V
-- -- 0.4 V
VDD = 5.5V
0 VCB VIL or VIH VCB VDD
-1
--
1 μA
000-0055596-10
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SLG55596A
Electrical Characteristics - Logic Input SMART-CDP
VDD = 4.5V to 5.5V, TA = 25°C (unless specified otherwise)
Parameter Description
Condition/Note
VIH SMART-CDP input Logic High
VIL SMART-CDP input Logic Low
VDD = 5.5V
IIN SMART-CDP Input Leakage Current 0V < VSMART-CDP < VIL or
VIH < VSMART-CDP < VDD
Min.
3.0
--
-1
Typ.
--
--
--
Max.
--
0.8
1
Unit
V
V
μA
Electrical Characteristics - CEN Outputs
VDD = 4.5V to 5.5V, TA = 25°C (unless specified otherwise)
Parameter Description
Condition/Note
Min. Typ. Max. Unit
TVBT
VBUS Toggle Time
CB = Logic 0 to Logic 1 or Logic
1 to Logic 0
1.5
2.0
2.5
s
VOL_CEN CEN Output Logic Low Voltage
IOUT_CEN CEN Output Leakage Current
CB = Logic 0 to Logic 1
ISINK = 2mA
VDD = 5.5V
VCEN = 5.5V or CEN deasserted
--
--
-- 0.4V V
-- 1 μA
Electrical Characteristics - ESD Protection
VDD = 4.5V to 5.5V, TA = 25°C (unless specified otherwise)
Parameter Description
Condition/Note
VESD
ESD Protection Level
(DP and DM Only)
Human Body Model
VESD
ESD Protection Level
(All other pins)
Human Body Model
Min.
--
--
Typ.
±8
±2
Max.
--
--
Unit
kV
kV
000-0055596-10
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