90N3LLH6.pdf 데이터시트 (총 16 페이지) - 파일 다운로드 90N3LLH6 데이타시트 다운로드

No Preview Available !

STL90N3LLH6
N-channel 30 V, 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™
Power MOSFET in PowerFLAT™ 5x6 package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™5x6
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
Order code
STL90N3LLH6
VDS
30 V
RDS(on) max.
0.0045 Ω
ID
24 A
(1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
Very low switching gate charge
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
G(4) developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
12 34
S(1, 2, 3)
Top View
AM15540v2
Order code
STL90N3LLH6
Table 1. Device summary
Marking
Packages
90N3LLH6
PowerFLAT™ 5x6
Packaging
Tape and reel
September 2013
This is information on a product in full production.
DocID15573 Rev 4
1/16
www.st.com

No Preview Available !

Contents
Contents
STL90N3LLH6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 DocID15573 Rev 4

No Preview Available !

STL90N3LLH6
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID(1)
ID (1)
ID (1)
ID(2)
ID (2)
ID (2)
IDM(2) (3)
IDM (1) (3)
PTOT (1)
PTOT (2)
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 70 °C
Drain current (continuous) at TC = 100 °C
Drain current (continuous) at Tpcb = 25 °C
Drain current (continuous) at Tpcb= 70 °C
Drain current (continuous) at Tpcb=100 °C
Drain current (pulsed)
Drain current (pulsed)
Total dissipation at TC = 25 °C
Total dissipation at Tpcb = 25 °C
Derating factor
TJ Operating junction temperature
Tstg Storage temperature
1. The value is rated according to Rthj-c
2. The value is rated according to Rthj-pcb
3. Pulse width limited by safe operating area
Value
30
± 20
90
67.5
56.2
24
18
15
96
360
60
4
0.03
-55 to 150
Unit
V
V
A
A
A
A
A
A
A
A
W
W
W/°C
°C
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case (drain, steady state)
Rthj-pcb (1) Thermal resistance junction-ambient
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Value
2.08
31.3
Unit
°C/W
°C/W
Symbol
EAS
Table 4. Avalanche characteristics
Parameter
Single pulse avalanche energy
(starting TJ = 25 °C, ID= 12 A; L= 1.25mH)
Value
90
Unit
mJ
DocID15573 Rev 4
3/16
16

No Preview Available !

Electrical characteristics
2 Electrical characteristics
STL90N3LLH6
(TCASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On/off states
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on-
resistance
ID = 250 µA, VGS= 0
VDS = 30 V,
VDS = 30 V TC = 125 °C
VGS = ±20 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 12 A
VGS= 4.5 V, ID= 12 A
Min. Typ. Max. Unit
30 V
1 µA
10 µA
±100 nA
1 1.7
2.5
0.0038 0.0045
0.0057 0.0073
V
Ω
Ω
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
RG Gate input resistance
Table 6. Dynamic
Test conditions
VDS = 25 V, f=1 MHz,
VGS=0
Min. Typ. Max. Unit
1350 1690 2030
230 290 350
pF
pF
140 176 210 pF
VDD=15 V, ID = 24 A
VGS =4.5 V
(see Figure 14)
17 nC
8 nC
6 nC
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
1.25
1.7
2
Ω
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
VDD=15 V, ID= 12 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Min. Typ. Max. Unit
- 9.5 - ns
- 30 - ns
- 37 - ns
- 12 - ns
4/16 DocID15573 Rev 4

No Preview Available !

STL90N3LLH6
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 24 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A,
di/dt = 100 A/µs,
VDD=25 V
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 24 A
- 96 A
- 1.1 V
- 24
ns
- 16.8
nC
- 1.4
A
DocID15573 Rev 4
5/16
16