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STx11NM60N
N-channel 600 V, 0.37 , 10 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
Features
Type
VDSS
(@TJmax)
STB11NM60N-1
STB11NM60N
STD11NM60N
STD11NM60N-1
STF11NM60N
STP11NM60N
650 V
650 V
650 V
650 V
650 V
650 V
RDS(on)
max
0.45
0.45
0.45
0.45
0.45
0.45
ID
10 A
10 A
10 A
10 A
10 A(1)
10 A
1. Limited only by maximum temperature allowed
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
123
I²PAK
3
1
D²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB11NM60N-1
STB11NM60N
STD11NM60N-1
STD11NM60N
STP11NM60N
STF11NM60N
B11NM60N
11NM60N
D11NM60N
D11NM60N
P11NM60N
F11NM60N
March 2009
Rev 5
Package
I²PAK
D²PAK
IPAK
DPAK
TO-220
TO-220FP
Packaging
Tube
Tape and reel
Tube
Tape and reel
Tube
Tube
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Contents
Contents
STx11NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
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STx11NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220,I²PAK,
D²PAK,DPAK,IPAK
Unit
TO-220FP
VDS
VGS
ID
ID
IDM (2)
PTOT
dv/dt (3)
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
Peak diode recovery voltage slope
600
± 25
10
6.3
40
90
0.8
15
10(1)
6.3 (1)
40(1)
25
0.2
V
V
A
A
A
W
W/°C
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t = 1 s;TC
= 25 °C)
2500
V
Tstg Storage temperature
TJ Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10 A, di/dt 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
-55 to 150
150
°C
°C
Symbol
Parameter
Value
Unit
TO-220 I²PAK DPAK D²PAK IPAK TO-220FP
Rthj-case
Rthj-amb
Rthj-pcb
Tl
Thermal resistance
junction-case max
Thermal resistance
junction-amb max
Thermal resistance
junction-pcb max
Maximum lead
temperature for soldering
purposes
62.5
1.38 5 °C/W
100 62.5 °C/W
50 30
°C/W
300 °C
Table 4. Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
EAS (starting TJ = 25 °C, ID = IAS, VDD = 50 V)
3.5 A
200 mJ
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Electrical characteristics
2 Electrical characteristics
STx11NM60N
(TCASE=25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
600
dv/dt(1)
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source voltage slope
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
VDD = 400 V,ID = 5 A,
VGS =10 V
VDS = Max rating,
VDS=Max rating,Tc=125 °C
VGS = ±20 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 5 A
2
1. Characteristic value at turn off on inductive load
V
45 V/ns
1 µA
10 µA
±100 nA
3 4V
0.37 0.45
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs(1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =15 V, ID= 5 A
VDS =50 V, f=1 MHz,
VGS=0
7.5 S
850 pF
44 pF
5 pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS=0, VDS =0 to 480 V
130 pF
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
3.7
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=480 V, ID = 10 A
VGS =10 V
Figure 19
31 nC
4.2 nC
15.9 nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
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STx11NM60N
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
Figure 18
Figure 23
Min. Typ. Max. Unit
22 ns
18.5 ns
50 ns
12 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM
VSD(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 10 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =10 A, di/dt =100 A/µs,
VDD =100 V
Figure 20
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD =100 V
di/dt =100 A/µs, ISD = 10 A
TJ = 150 °C Figure 20
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
10
40
1.3
340
3.26
19.2
460
4.42
19.2
A
A
V
ns
µC
A
ns
µC
A
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220,
I²PAK, D²PAK
Figure 3. Thermal impedance for TO-220,
I²PAK, D²PAK
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