8NE60/F8NE60/I8NE60/E8NE60/B8NE60/D8NE60
7.5A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by
the self-aligned planar technology which reduce the
conduction loss, improve switching performance and
enhance the avalanche energy. Which accords with the
RoHS standard.
VDSS = 600V
RDS(on) （TYP)= 1.0Ω
ID = 7.5A
2 Features
● Fast Switching
● ESD Improved Capability
● Low ON Resistance(Rdson≤1.3Ω)
● Low Gate Charge(Typical Data:24nC)
● Low Reverse Transfer Capacitances(Typical:5.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Used in various power switching circuit for system
miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
TO-220C TO-220F TO-262
TO-263
TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Value
8NE60/I8NE60/E8NE60
/B8NE60/D8NE60
Maximum Drian-Source DC Voltage
VDS
600
Maximum Gate-Drain Voltage
Drain Current(continuous)
VGS
ID（T=25℃）
（T=100℃）
±30
7.5
4.8
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche Energy(Note 5)
Peak Diode Recovery dv/dt(Note 6)
IDM
EAS
dv/dt
30
400
5
Total Dissipation
Ta=25℃
TC=25℃
Ptot
Ptot
2
100
Junction Temperature
storage Temperature
Tj 150
Tstg -55～150
Maximum Temperature for soldering
TL
300
F8NE60
2
35
Units
V
V
A
A
A
mJ
V/ns
W
W
℃
℃
℃
4.2 Thermal Characteristics
Parameter
Thermal Resistance Junction to Case-sink
Thermal Resistance Junction to Ambient
Symbol
RthJC
RthJA
Value
8NE60/I8NE60/E8NE60
/B8NE60/D8NE60
1.25
62.5
F8NE60
3.57
62.5
Units
℃/W
℃/W
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
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Rev. 1.0
