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5N60/F5N60/I5N60/E5N60/B5N60/D5N60
5A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by
the self-aligned planar technology which reduce the
conduction loss, improve switching performance and
enhance the avalanche energy. Which accords with the
RoHS standard.
VDSS = 600V
RDS(on) TYP)= 1.4Ω
ID = 5A
2 Features
● Fast Switching
● Low ON Resistance(Rdson≤1.7Ω)
● Low Gate Charge(Typical:19.5nC)
● Low Reverse Transfer Capacitances(Typical:7.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● used in various power switching circuit for system
miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
TO-220C TO-220F TO-262
TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25,unless otherwise noted)
Parameter
Symbol
Value
5N60/I5N60/E5N60
/B5N60/D5N60
Drian-Source Voltage
VDS 600
Gate-Drain Voltage
VGS ±30
Drain Current(continuous)
IDT=25℃)
T=100℃)
5
3.6
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche Energy(Note 5)
Avalanche Energy Repetitive(Note 1)
Avalanche Current(Note 1)
Peak Diode Recovery dv/dt(Note 6)
IDM
EAS
EAR
IAR
dv/dt
20
270
31
2.5
5
Total Dissipation
Ta=25
TC=25
Ptot
Ptot
2
85
Junction Temperature
storage Temperature
Tj 150
Tstg -55150
Maximum Temperature for soldering
TL
300
F5N60
2
34
Units
V
V
A
A
A
mJ
mJ
A
V/ns
W
W
4.2 Thermal Characteristics
Parameter
Thermal Resistance Junction to Case-sink
Thermal Resistance Junction to Ambient
Symbol
RthJC
RthJA
Value
5N60/I5N60/E5N60
/B5N60/D5N60
1.47
62.5
F5N60
3.68
62.5
Units
/W
/W
ROUM Semiconductor Technology CO.,LTD.
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5N60/F5N60/I5N60/E5N60/B5N60/D5N60
4.3 Electrical Characteristics(Tc=25,unless otherwise noted)
Parameter
Symbol
Test Condition
Value
min typ max
Off Characteristics
Drain-source
Breakdown Voltage
BVDSS
ID=250μA,VGS=0V
600 --
--
Drain-to-Source
Leakage Current
IDSS
VDS=600V,VGS=0V,TC=25
VDS=480V,VGS=0V,TC=125
--
--
-- 1
-- 100
Gate-to-Source
Forward Leakage
IGSSF
VGS=+30V
-- -- 100
Gate-to-Source
Reverse Leakage
IGSSR
VGS=-30V
-- -- -100
On Characteristics(Note 3)
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250μA
2 -- 4
Drain-source on Resist
ance
RDS(on)
VGS=10V,ID=2.5A
-- 1.4 1.7
Dynamic Characteristics(Note 4)
Forward Transfer cond
uctance
gfs
VDS=30V,ID=5A
-- 10 --
Input Capacitance
Ciss
-- 720 --
Output Capacitance
Coss
Reverse Transfer Cap
acitance
Crss
Switching Characteristics(note4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
VGS=0V,VDS=25V,f=1.0MHz
--
75
--
-- 7.5 --
ID=5A,
VDD=300V,
VGS=10V,
RG=9.1Ω
-- 9.5 --
-- 11 --
-- 34 --
-- 16 --
Total Gate Charge
Qg
-- 19.5 --
Gate-to-Source Charge
Gate-to-Drain(“Miller”)C
harge
Qgs
Qgd
ID=5A,VDD=300V,VGS=10V
--
4 --
-- 7.5 --
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VFSD
VGS=0V,IS=5A
-- -- 1.5
Diode Forward Current
(Note 2)
IS
-- --
5
Reverse Recovery Time
Reverse Recovery
Charge
trr
Qrr
TJ=25,IF=5A,
dIF/dt=100A/μS,VGS=0V
-- 203 --
-- 943 --
Units
V
μA
μA
nA
nA
V
Ω
S
pF
nS
nC
V
A
nS
nC
Notes
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=10mH,ID=7.4A,VDD=50V,VGATE=600V,Start TJ=25.
6. ISD=5A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25.
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
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5N60/F5N60/I5N60/E5N60/B5N60/D5N60
5 Typical characteristics diagrams
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
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5N60/F5N60/I5N60/E5N60/B5N60/D5N60
5 Typical characteristics diagrams(continues)
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www.roum.cn
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5N60/F5N60/I5N60/E5N60/B5N60/D5N60
5 Typical characteristics diagrams(continues)
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www.roum.cn
Page 5 of 12
Rev. 1.0