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630/F630/I630/E630/B630/D630
9A 200V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by
the self-aligned planar technology which reduce the
conduction loss, improve switching performance and
enhance the avalanche energy. Which accords with the
RoHS standard.
VDSS = 200V
RDS(on) TYP)= 0.34Ω
ID = 9A
2 Features
● Fast Switching
● Low ON Resistance(Rdson≤0.4Ω)
● Low Gate Charge(Typical Data:22nC)
● Low Reverse Transfer Capacitances(Typical:22pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● High efficiency switch mode power supplies.
● Electronic lamp ballasts based on half bridge.
● UPS
● Inverter
TO-220C TO-220F TO-262
TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25,unless otherwise noted)
Parameter
Symbol
Value
630/I630/E630
/B630/D630
Drian-Source Voltage
VDS 200
Gate-Drain Voltage
Drain Current(continuous)
VGS
IDT=25℃)
T=100℃)
±30
9
5.7
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche Energy(Note 5)
Avalanche Energy Repetitive(Note 1)
Avalanche Current(Note 1)
Peak Diode Recovery dv/dt(Note 6)
IDM
EAS
EAR
IAR
dv/dt
36
160
7.2
9
5.5
Total Dissipation
Ta=25
TC=25
Ptot
Ptot
2
72
Junction Temperature
storage Temperature
Tj 150
Tstg -55150
Maximum Temperature for soldering
TL
300
F630
2
38
Units
V
V
A
A
A
mJ
mJ
A
V/ns
W
W
4.2 Thermal Characteristics
Parameter
Thermal Resistance Junction to Case-sink
Thermal Resistance Junction to Ambient
Symbol
RthJC
RthJA
Value
630/I630/E630
/B630/D630
1.74
62.5
F630
3.29
62.5
Unit
/W
/W
ROUM Semiconductor Technology CO.,LTD.
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630/F630/I630/E630/B630/D630
4.3 Electrical Characteristics(Tc=25,unless otherwise noted)
Parameter
Symbol
Test Condition
Value
Min Typ Max
Off Characteristics
Drain-source
Breakdown Voltage
BVDSS
ID=250μA,VGS=0V
200 --
--
Drain-to-Source
Leakage Current
IDSS
VDS=200V,VGS=0V,TC=25
VDS=160V,VGS=0V,TC=125
--
--
-- 10
-- 100
Gate-to-Source
Forward Leakage
IGSSF
VGS=+30V
-- -- 100
Gate-to-Source
Reverse Leakage
IGSSR
VGS=-30V
-- -- -100
On Characteristics(Note 3)
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250μA
2 -- 4
Drain-source on Resist
ance
RDS(on)
VGS=10V,ID=4.5A
-- 0.34 0.4
Dynamic Characteristics(Note 4)
Forward Transfer cond
uctance
gfs
VDS=20V,ID=4.5A
-- 5 --
Input Capacitance
Ciss
-- 550 --
Output Capacitance
Coss
Reverse Transfer Cap
acitance
Crss
Switching Characteristics(note4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
VGS=0V,VDS=25V,f=1.0MHz
--
--
ID=9A,
VDD=100V,
VGS=10V,
RG=10Ω
--
--
--
--
85 --
22 --
11 --
70 --
60 --
65 --
Total Gate Charge
Qg
-- 22 --
Gate-to-Source Charge
Gate-to-Drain(“Miller”)C
harge
Qgs
Qgd
ID=9A,VDD=160V,VGS=10V
-- 3.6 --
-- 10.2 --
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VFSD
VGS=0V,IS=9A
-- -- 1.5
Diode Forward Current
(Note 2)
IS
-- --
9
Reverse Recovery Time
Reverse Recovery
Charge
trr
Qrr
TJ=25,IF=9A,
dIF/dt=100A/μS,VGS=0V
-- 140 --
-- 870 --
Units
V
μA
μA
nA
nA
V
Ω
S
pF
nS
nS
nS
nS
nC
V
A
nS
nC
Notes
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=10mH,ID=5.7A,VDD=50V,VGATE=200V,Start TJ=25.
6. ISD=9A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25.
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
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5 Typical characteristics diagrams
630/F630/I630/E630/B630/D630
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
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630/F630/I630/E630/B630/D630
5 Typical characteristics diagrams(continues)
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630/F630/I630/E630/B630/D630
5 Typical characteristics diagrams(continues)
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