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10A 600V N-channel Enhancement Mode Power MOSFET
F10N60
1 Description
These silicon N-channel Enhanced VDMOSFETs, is obtained by
the self-aligned planar technology which reduce the conduction
loss, improve switching performance and enhance the avalanche
energy. Which accords with the RoHS standard.
G
1
2 Features
● Fast Switching
● Low ON Resistance(Rdson≤0.9Ω)
● Low Gate Charge(Typical Data:32nC)
● Low Reverse Transfer Capacitances(Typical:7.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Used in Various Power Switching Circuit for System
Miniaturization and Higher Efficiency.
Power Switch Circuit of Adaptor and Charger.
2 D VDSS = 600V
RDS(on)TYP)= 0.68Ω
3 S ID = 10A
TO-220F
4 Electrical Characteristics
4.1 Absolute Maximum Rating (Tc=25,unless otherwise noted)
Parameter
Symbol
Maximum Drian-Source DC Voltage
Maximum Gate-Drain Voltage
VDS
VGS
Drain Current(continuous)
IDT=25℃)
T=100℃)
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche Energy(Note 5)
Peak Diode Recovery dv/dt(Note 6)
5
Total Dissipation
Ta=25
TC=25
Junction Temperature
Storage Temperature
Maximum Temperature for soldering
6
IDM
EAS
dv/dt
Ptot
Ptot
Tj
Tstg
TL
Value
600
±30
10
6.3
40
580
5
7
2
40
150
-55150
300
Units
V
V
A
A
A
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Size
D
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File:
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F10N60
4.2 Thermal Characteristics
Parameter
Thermal Resistance Junction to Case-sink
Thermal Resistance Junction to Ambient
Symbol
RthJC
RthJA
Value
3.13
62.5
Unit
/W
/W
4.3 Electrical Characteristics(Tc=25,unless otherwise noted)
Parameter
Symbol
Off Characteristics
Drain-source Breakdown
Voltage
Drain-to-Source Leakage
Current
BVDSS
IDSS
Gate-to-Source Forward
Leakage
Gate-to-Source Reverse
Leakage
On Characteristics(Note 3)
IGSSF
IGSSR
Gate Threshold Voltage
VGS(th)
Drain-source on
Resistance
RDS(on)
Dynamic Characteristics(Note 4)
Forward Transfer
Conductance
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer
Capacitance
Crss
Switching Characteristics(note4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain(“Miller”)
Charge
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage(N
ote 3)
VFSD
Diode Forward Current(N
ote 2)
IS
Test Condition
ID=250μA,VGS=0V
VDS=600V,VGS=0V,TC=25
VDS=480V,VGS=0V,TC=125
VGS=+30V
VGS=-30V
VDS=VGS,ID=250μA
VGS=10V,ID=5A
VDS=15V,ID=5A
VGS=0V,VDS=25V,f=1.0MHz
ID=10A,
VDD=300V,
RG=10Ω
ID=10A,VDD=480V,VGS=10V
VGS=0V,IS=10A
Value
Min Typ Max
600 -- --
-- --
1
-- -- 100
-- -- 100
-- -- -100
2 -- 4
-- 0.68 0.9
-- 9.5 --
-- 1609 --
-- 136 --
-- 7.5 --
-- 26 --
-- 23 --
-- 49 --
-- 27 --
-- 32 --
-- 8 --
-- 12 --
-- -- 1.5
-- -- 10
Units
V
μA
μA
nA
nA
V
Ω
S
pF
nS
nS
nS
nS
nC
V
A
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Reverse Recovery Time
Reverse Recovery
Charge
Reverse Recovery
Current
trr
Qrr
IRRM
TJ=25,IS=10A,
dIF/dt=100A/μS,VGS=0V
F10N60
-- 499 --
nS
-- 2940 --
nC
-- 11.8 --
A
Notes
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=10mH,ID=10.8A, Start TJ=25.
6. ISD=10A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25.
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5 Typical characteristics diagrams
F10N60
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5 Typical characteristics diagrams(continues)
F10N60
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