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STL40DN3LLH5
Automotive-grade dual N-channel 30 V, 0.016 typ., 40 A
STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 DI package
Datasheet - production data
Features
Order code
STL40DN3LLH5
VDS
30 V
RDS(on) max. ID
0.018 40 A
Figure 1. Internal schematic diagram
AEC-Q101 qualified
Low on-resistance
High avalanche ruggedness
Low gate drive power loss
Wettable flank package
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’ STripFET™
H5 technology. The device has been optimized to
achieve very low on-state resistance, contributing
to a FoM that is among the best in its class.
Order code
STL40DN3LLH5
Table 1. Device summary
Marking
Package
40DN3LH5
PowerFLAT™ 5x6
double island
October 2016
This is information on a product in full production.
DocID18416 Rev 7
Packing
Tape and reel
1/16
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Contents
Contents
STL40DN3LLH5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 PowerFLAT 5x6 double island WF type R . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STL40DN3LLH5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS
ID(1)
ID (1)
ID(2)
ID (2)
IDM (2)(3)
IDM (1)(3)
PTOT (1)
PTOT (2)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (continuous) at Tpcb = 25 °C
Drain current (continuous) at Tpcb=100°C
Drain current (pulsed)
Drain current (pulsed)
Total dissipation at TC = 25°C
Total dissipation at Tpcb = 25°C
TJ Operating junction temperature range
Tstg Storage temperature range
1. The value is rated according Rthj-c
2. The value is rated according Rthj-pcb
3. Pulse width limited by safe operating area
Value
30
± 22
40
28
11
7
44
160
50
4.7
-55 to 175
Unit
V
V
A
A
A
A
A
A
W
W
°C
Symbol
Table 3. Thermal resistance
Parameter
Rthj-case Thermal resistance junction-case
Rthj-pcb (1) Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 s
Value
3.0
32
Unit
°C/W
°C/W
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Electrical characteristics
2 Electrical characteristics
STL40DN3LLH5
(TCASE=25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS = 0 V
IDSS
Zero gate voltage drain
current
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V,
TJ =125 °C(1)
IGSS Gate body leakage current VGS = ± 22 V, VDS = 0 V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID= 5.5 A
VGS = 4.5 V, ID= 5.5 A
1. Defined by design, not subject to production test
Min. Typ. Max. Unit
30 V
1 µA
10 µA
±100 nA
1 1.5
V
0.016 0.018
0.02 0.025
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0 V
VDD= 15 V, ID = 11 A
VGS = 4.5 V
(see Figure 13)
Min. Typ.
- 475
- 97
Max.
-
-
Unit
pF
pF
- 19 - pF
- 4.5 - nC
- 1.7 - nC
- 1.9 - nC
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
VDD = 15 V, ID = 11 A,
RG= 4.7 , VGS = 10 V
(see Figure 12)
Min.
-
-
-
-
Typ.
4
22
13
2.8
Max. Unit
- ns
- ns
- ns
- ns
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STL40DN3LLH5
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
VSD(1) Forward on voltage
ISD = 11 A, VGS = 0 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A,
di/dt = 100 A/µs,
VDD = 25 V, Tj =150 °C
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min.
-
-
-
-
Typ.
16.2
1
8.1
Max.
1.1
Unit
V
ns
nC
A
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