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STP200N3LL
N-channel 30 V, 2.15 mΩ typ., 120 A Power MOSFET
in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
Features
Order code VDS
STP200N3LL 30 V
RDS(on)
max.
2.4 mΩ
ID
120 A
PTOT
176.5 W
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET with
very low RDS(on) in all packages.
G(1)
S(3)
Order code
STP200N3LL
AM01475v1_Tab
Table 1: Device summary
Marking
Package
200N3LL
TO-220
Packing
Tube
July 2016
DocID028758 Rev 2
This is information on a product in full production.
1/13
www.st.com

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Contents
Contents
STP200N3LL
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-220 type A package information................................................ 10
5 Revision history ............................................................................ 12
2/13 DocID028758 Rev 2

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STP200N3LL
1 Electrical ratings
Symbol
VDS
VGS
ID
ID(1)
ID
IDM(2)
PTOT
EAS(3)
Tstg
Tj
Table 2: Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C (silicon limited)
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Single pulse avalanche energy
Storage temperature range
Operating junction temperature range
Notes:
(1) Current is limited by package.
(2) Pulse width is limited by safe operating area.
(3) starting Tj = 25 °C, ID = 68 A
Symbol
Rthj-case
Rthj-amb
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Electrical ratings
Value
30
±20
200
120
120
480
176.5
300
Unit
V
A
W
mJ
55 to 175 °C
Value
0.85
62.5
Unit
°C/W
DocID028758 Rev 2
3/13

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Electrical characteristics
STP200N3LL
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain
current
IGSS
VGS(th)
RDS(on)
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VGS = 0 V, VDS = 30 V
VGS = 0 V, VDS = 30 V,
Tcase = 125 °C(1)
VDS = 0 V, VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 60 A
VGS = 4.5 V, ID = 60 A
Min. Typ. Max. Unit
30 V
1
µA
10
±100 nA
1 2.5 V
2.15 2.4
2.5 3.1
Notes:
(1)Defined by design, not subject to production test.
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
RG
Parameter
Input capacitance
Output
capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source
charge
Gate-drain
charge
Intrinsic gate
resistance
Table 5: Dynamic
Test conditions
VDS = 25 V, f = 1 MHz, VGS = 0 V
VDD = 15 V, ID = 120 A, VGS = 4.5 V
(see Figure 14: "Test circuit for gate
charge behavior")
f = 1 MHz, ID = 0 A, gate DC bias = 0 V,
magnitude of alternative signal = 20 mV
Min.
-
-
-
-
-
-
-
Typ.
5200
640
510
53
13
27
1.1
Max.
-
-
-
-
-
-
-
Unit
pF
nC
Ω
Symbol
Parameter
td(on)
Turn-on delay
time
tr
td(off)
Rise time
Turn-off delay
time
tf Fall time
Table 6: Switching times
Test conditions
Min. Typ. Max. Unit
VDD = 15 V, ID = 60 A RG = 4.7 Ω,
VGS = 10 V (see Figure 13: "Test circuit
for resistive load switching times" and
Figure 18: "Switching time waveform")
- 18 -
- 183 -
- 90 -
- 108 -
ns
4/13 DocID028758 Rev 2

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STP200N3LL
Symbol
VSD(1)
trr
Qrr
IRRM
Parameter
Forward on voltage
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
Table 7: Source-drain diode
Test conditions
VGS = 0 V, ISD = 60 A
Electrical characteristics
Min. Typ. Max. Unit
- 1.1 V
ISD = 120 A, di/dt = 100 A/µs,
VDD = 24 V (see Figure 15: "Test
circuit for inductive load switching
and diode recovery times")
- 35
- 34
-2
ns
nC
A
Notes:
(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028758 Rev 2
5/13