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STD150N3LLH6
STP150N3LLH6, STU150N3LLH6
N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
STD150N3LLH6
STP150N3LLH6
STu150N3LLH6
VDSS
30 V
30 V
30 V
RDS(on) max
0.0028
0.0033
0.0033
ID
80 A
80 A
80 A
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
3
1
DPAK
IPAK
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
$4!"OR
'
Table 1. Device summary
Order codes
STD150N3LLH6
STP150N3LLH6
STU150N3LLH6
Marking
150N3LLH6
150N3LLH6
150N3LLH6
3
!-V
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
September 2009
Doc ID 15227 Rev 3
1/16
www.st.com
16

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Contents
Contents
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
......................... 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 15227 Rev 3

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STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID (1) Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (3) Single pulse avalanche energy
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, ID = 40 A, VDD = 25 V
Value
30
± 20
80
80
320
110
0.73
525
-55 to 175
175
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
Tj
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering purpose
Value
1.36
100
275
Unit
V
V
A
A
A
W
W/°C
mJ
°C
°C
Unit
°C/W
°C/W
°C
Doc ID 15227 Rev 3
3/16

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Electrical characteristics
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
V(BR)DSS
Drain-source breakdown
Voltage
IDSS
IGSS
VGS(th)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 250 µA, VGS= 0
VDS = 30 V
VDS = 30 V,Tc = 125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
SMD version
VGS = 10 V, ID = 40 A
VGS = 4.5 V, ID = 40 A
SMD version
VGS = 4.5 V, ID = 40 A
Min. Typ. Max. Unit
30 V
1 µA
10 µA
±100 nA
1 2.5 V
0.0024 0.0028
0.0029 0.0033
0.0034 0.0045
0.0039 0.0049
Table 5. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
RG Gate input resistance
Test conditions
VDS = 25 V, f=1 MHz,
VGS = 0
VDD = 15 V, ID = 80 A
VGS = 4.5 V
(see Figure 14)
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
Min Typ. Max. Unit
4040
pF
- 740 - pF
425 pF
40 nC
- 16.3 - nC
15.8 nC
- 1.4 -
4/16 Doc ID 15227 Rev 3

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STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
Electrical characteristics
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
VDD = 15 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
VDD = 15 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Min. Typ.
17
-
18
75
-
46
Max. Unit
ns
-
ns
ns
-
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40 A, VGS = 0
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 24 V
(see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
-
320 A
- 1.1 V
34
- 35
2.1
ns
nC
A
Doc ID 15227 Rev 3
5/16