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STD90N4F3, STI90N4F3
STP90N4F3, STU90N4F3
N-channel 40 V, 5.0 m, 80 A, DPAK, TO-220, IPAK, I2PAK
STripFET™ III Power MOSFET
Features
Type
STD90N4F3
STI90N4F3
STP90N4F3
STU90N4F3
VDSS
40 V
40 V
40 V
40 V
RDS(on)
max
< 5.8m
< 6.2 m
< 6.2 m
< 6.2 m
ID
80 A
80 A
80 A
80 A
Pw
110 W
110 W
110 W
110 W
Standard threshold drive
100% avalanche tested
Application
Switching applications
Description
This STripFET™ III Power MOSFET technology
is among the latest improvements, which have
been especially tailored to minimize on-state
resistance providing superior switching
performances.
3
1
DPAK
IPAK
3
2
1
3
2
1
TO-220
123
I²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD90N4F3
STI90N4F3
STP90N4F3
STU90N4F3
Marking
90N4F3
90N4F3
90N4F3
90N4F3
Package
DPAK
I²PAK
TO-220
IPAK
July 2009
Doc ID 14212 Rev 3
Packaging
Tape & reel
Tube
Tube
Tube
1/16
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Contents
Contents
STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 14212 Rev 3

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STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3
1 Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
VDS Drain-source voltage (VGS=0)
VGS
ID (1)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
IDM (2)
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
EAS (4) Single pulse avalanche energy
Tj Operating junction temperature
Tstg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD 80 A, di/dt 400A/µs, VDS V(BR)DSS, Tj Tjmax
4. Starting Tj = 25°C, ID = 40A, VDD = 30V
Value
40
± 20
80
65
320
110
0.73
8
400
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
TO-220
I²PAK
IPAK
Unit
DPAK
Rthj-case Thermal resistance junction-case max
Rthj-a Thermal resistance junction-ambient max
Rthj-pcb (1) Thermal resistance junction-ambient max
Tl Maximum lead temperature for soldering purpose
1. When mounted on 1inch² FR-4 2Oz Cu board
62.5
300
1.36
100
275
°C/W
°C/W
50 °C/W
°C
Doc ID 14212 Rev 3
3/16

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Electrical characteristics
STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
IGSS
VGS(th)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS= 0
40
VDS = Max rating,
VDS = Max rating,Tc = 125°C
V
10 µA
100 µA
VGS = ±20 V
±200 nA
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 40 A for DPAK
VGS= 10 V, ID= 40 A for IPAK,
I²PAK, TO-220
2
4V
5.0 5.8 m
5.4 6.2 m
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1) Forward transconductance
VDS =25 V, ID=40 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS =25 V, f=1 MHz, VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=20 V, ID = 80 A
VGS =10 V
(see Figure 14)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ. Max. Unit
- 100
S
2200
- 580
40
pF
pF
pF
40 54 nC
- 11
nC
8 nC
4/16 Doc ID 14212 Rev 3

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STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3
Electrical characteristics
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
VDD=20 V, ID= 40 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
VDD=20 V, ID= 40 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
Min. Typ. Max. Unit
15
-
50
ns
-
ns
40
-
15
ns
-
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80 A, VGS=0
ISD=80 A,
di/dt = 100 A/µs,
VDD=30 V, Tj=150°C
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
-
320 A
- 1.5 V
45
- 60
2.8
ns
nC
A
Doc ID 14212 Rev 3
5/16