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STGB15M65DF2
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss
in a D²PAK package
Datasheet - production data
TAB
2
3
1
D²PAK
Figure 1: Internal schematic diagram
Features
6 μs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 15 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
Applications
Motor control
UPS
PFC
General purpose inverter
Order code
STGB15M65DF2
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Marking
Package
Packing
G15M65DF2
D²PAK
Tape and reel
May 2017
DocID025356 Rev 4
This is information on a product in full production.
1/19
www.st.com

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Contents
Contents
STGB15M65DF2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ................................................................................... 12
4 Package information ..................................................................... 13
4.1 D²PAK (TO-263) type A package information ................................. 13
4.2 D²PAK type A packing information .................................................. 16
5 Revision history ............................................................................ 18
2/19 DocID025356 Rev 4

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STGB15M65DF2
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VCES
IC
ICP(1)
VGE
IF
IFP(1)
PTOT
TSTG
TJ
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C
Continuous collector current at TC = 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current at TC = 25 °C
Continuous forward current at TC = 100 °C
Pulsed forward current
Total dissipation at TC = 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)Pulse width limited by maximum junction temperature.
Symbol
RthJC
RthJC
RthJA
Table 3: Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Electrical ratings
Value
650
30
15
60
±20
30
15
60
136
- 55 to 150
- 55 to 175
Unit
V
A
A
V
A
A
W
°C
°C
Value
1.1
2.08
62.5
Unit
°C/W
DocID025356 Rev 4
3/19

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Electrical characteristics
STGB15M65DF2
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
voltage
VGE = 0 V, IC = 250 μA
VCE(sat)
VF
VGE(th)
ICES
IGES
Collector-emitter saturation
voltage
Forward on-voltage
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
VGE = 15 V, IC = 15 A
VGE = 15 V, IC = 15 A,
TJ = 125 °C
VGE = 15 V, IC = 15 A,
TJ = 175 °C
IF = 15 A
IF = 15 A, TJ = 125 °C
IF = 15 A, TJ = 175 °C
VCE = VGE, IC = 500 µA
VGE = 0 V, VCE = 650 V
VCE = 0 V, VGE = ±20 V
Min. Typ. Max. Unit
650 V
1.55 2.0
1.9 V
2.1
1.7 2.6
1.5 V
1.4
56 7V
25 µA
±250 µA
Table 5: Dynamic characteristics
Symbol
Parameter
Test conditions
Cies Input capacitance
Coes Output capacitance
VCE= 25 V, f = 1 MHz,
VGE = 0 V
Cres Reverse transfer capacitance
Qg Total gate charge
Qge Gate-emitter charge
Qgc Gate-collector charge
VCC = 520 V, IC = 15 A,
VGE = 0 to 15 V
(see Figure 30: " Gate
charge test circuit")
Min. Typ. Max. Unit
- 1250 -
- 80 - pF
- 25 -
- 45 -
- 11 - nC
- 15 -
4/19 DocID025356 Rev 4

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STGB15M65DF2
Symbol
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Ets
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
tsc Short-circuit withstand time
VCE = 400 V, IC = 15 A,
VGE = 15 V, RG = 12 Ω
(see Figure 29: " Test
circuit for inductive load
switching" )
VCE = 400 V, IC = 15 A,
VGE = 15 V, RG = 12 Ω,
TJ = 175 °C
(see Figure 29: " Test
circuit for inductive load
switching" )
VCC 400 V, VGE = 15 V,
TJstart = 150 °C
VCC 400 V, VGE = 13 V,
TJstart = 150 °C
24 - ns
7.8 - ns
1570 - A/µs
93 - ns
106 -
ns
0.09 - mJ
0.45 - mJ
0.54 - mJ
24.8 -
ns
9.2 - ns
1300 - A/µs
96 - ns
169 -
ns
0.22 - mJ
0.61 - mJ
0.83 - mJ
6-
µs
10
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
Symbol
Table 7: Diode switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
trr
Qrr
Irrm
dIrr/dt
Err
trr
Qrr
Irrm
dIrr/dt
Err
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
IF = 15 A, VR = 400 V,
VGE = 15 V,
di/dt = 1000 A/µs
(see Figure 29: " Test
circuit for inductive load
switching")
IF = 15 A, VR = 400 V,
VGE = 15 V,
di/dt = 1000 A/µs,
TJ = 175 °C
(see Figure 29: " Test
circuit for inductive load
switching")
- 142 -
- 525 -
- 13.4 -
ns
nC
A
- 790 - A/µs
- 64 -
- 241 -
- 1690 -
- 20 -
µJ
ns
nC
A
- 420 - A/µs
- 176 -
µJ
DocID025356 Rev 4
5/19