K1156.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 K1156 데이타시트 다운로드

No Preview Available !

2SK1155, 2SK1156
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
123
REJ03G0909-0200
(Previous: ADE-208-1247)
Rev.2.00
Sep 07, 2005
D
G 1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
Free Datasheet http://www.Datasheet4U.com

No Preview Available !

2SK1155, 2SK1156
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1155
2SK1156
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Drain to source
2SK1155
breakdown voltage
2SK1156
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain 2SK1155
current
2SK1156
Gate to source cutoff voltage
Static drain to source on 2SK1155
state resistance
2SK1156
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
450
500
±30
2.0
2.5
Typ
1.0
1.2
4.0
640
160
20
10
25
50
30
0.95
300
Ratings
450
500
±30
5
20
5
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
1.4
1.5
Unit
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
ID = 2.5 A, VGS = 10 V *3
S ID = 2.5 A, VDS = 10 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 2.5 A, VGS = 10 V,
ns RL = 12
ns
ns
V IF = 5 A, VGS = 0
ns IF = 5 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
Free Datasheet http://www.Datasheet4U.com

No Preview Available !

2SK1155, 2SK1156
Main Characteristics
Power vs. Temperature Derating
60
40
20
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
10
10 V
6V
Pulse Test
5.5 V
8
6
5.0 V
4
4.5 V
2
VGS = 4 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
6 5A
4
2A
2
ID = 1 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
20
10
5
2
1.0
DC
PW 1
Operat=io1n0(Tms
10
100 µs
ms
(1 shot)
µs
0.5
0.2
C = 25°C)
Ta = 25°C
0.1
2SK1156
0.05
2SK1155
1 3 10 30 100 300
1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
–25°C
8
VDS = 20 V
Pulse Test
6
TC = 25°C
75°C
4
2
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
10
Pulse Test
5 VGS = 10 V
2 15 V
1.0
0.5
0.2
0.1
0.5 1.0 2
5 10 20
Drain Current ID (A)
50
Free Datasheet http://www.Datasheet4U.com

No Preview Available !

2SK1155, 2SK1156
Static Drain to Source on State
Resistance vs. Temperature
5
VGS = 10 V
Pulse Test
4
3
ID = 5 A
2
2A
1A
1
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
5,000
2,000
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
1,000
500
200
100
50
0.1 0.2
0.5 1.0 2
5 10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
VDD = 100 V
400 VDS
250 V
400 V
20
16
300 12
VGS
200 8
ID = 5 A
100 VDD = 400 V
250 V
4
100 V
0
0 8 16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
10
VDS = 20 V
5 Pulse Test
–25°C
TC = 25°C
75°C
2
1.0
0.5
0.2
0.1
0.05 0.1 0.2
0.5 1.0 2
Drain Current ID (A)
5
1,000
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
Coss
10
Crss
1
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = 10 V
VDD
=
30
V
PW = 2 µs, duty < 1%
200
100
td (off)
50
tf
20 tr
td (on)
10
5
0.1 0.2
0.5 1.0 2
5
Drain Current ID (A)
10
Rev.2.00 Sep 07, 2005 page 4 of 6
Free Datasheet http://www.Datasheet4U.com

No Preview Available !

2SK1155, 2SK1156
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
8
6
4
2 5, 10 V
VGS = 0, –10 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
0.5
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
1 Shot
Pulse
0.01
10 µ 100 µ
θch–c (t) = γS (t) • θch–c
θch–c = 2.50°C/W, TC = 25°C
PDM
PW
D
=
PW
T
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor
RL
Vin = 10 V
50
VDD .=. 30 V
Waveforms
90 %
Vin 10 %
Vout 10 %
10 %
td (on)
90 %
90 %
tr td (off)
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
Free Datasheet http://www.Datasheet4U.com