K1405.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 K1405 데이타시트 다운로드

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2SK1405
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
Built-in fast diode (trr = 140 ns)
Suitable for motor control, switching regulator, DC-DC converter
Outline
TO-3PFM
D
G1
2
3
1. Gate
2. Drain
3. Source
S

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2SK1405
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
600
±30
15
60
15
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2

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2SK1405
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 600
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
2.0
Forward transfer admittance |yfs|
9
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max
——
——
±10
— 250
— 3.0
0.35 0.50
14
3150
780
110
35
120
240
100
1.0
140 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 500 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 V *1
ID = 8 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 8 A, VGS = 10 V,
RL = 3.75
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0,
diF/dt = 100 A/µs
3

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2SK1405
Power vs. Temperature Derating
60
40
20
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V 6 V
5V
16
Pulse Test
12
4.5 V
8
4
VGS = 4 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
100
30
10
3
1
0.3
OpiserliamtiiotendinbythRis
DaSre(oan)
PW
DC Op=er1a0tiomns((T11
C
1001µ0sµs
ms
S=h2o5t °pCul)se)
0.1
0.03 Ta = 25°C
0.05
1 3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 10 V
Pulse Test
16
12
8
TC = 75°C
25°C
4 –25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
4

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Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
20 A
6
4 10 A
2 ID = 5 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
2.0
Pulse Test
1.6
1.2
0.8
VGS = 10 V
0.4
ID = 20 A
10 A
5A
0
–40 0
40 80 120 160
Case Temperature TC (°C)
2SK1405
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5 VGS = 10, 15 V
0.2
0.1
0.05
1
2 5 10 20 50 100
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
50
20 TC = –25°C
25°C
10 75°C
5
2
1
0.5
0.2
VDS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current ID (A)
5