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CE
CHENYI ELECTRONICS
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 1N4149, 1N4447, 1N4449 are also
avaible in glass case DO-34
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color brand denotes cathode end
. Weight: Approx. 0.13gram
1N914 THRU 1N4454
SMALL SIGNAL SWITCHING DIODE
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Type
1N914
1N41491)
1N4150
1N4152
1N4153
1N4154
1N44471)
1N44491)
1N4450
1N4451
1N4453
1N4454
Peak Max. Max. Max.
reverse Aver. Power Junction
voltage Rectified Dissip tempera-
VRM(V) Current At 25 ture
I(AV)Ma Ptot(mW) TJ
Max.
Forward
Voltage
drop
VF at IF
(V) (mA)
Max.
Reverse
Current
Max. Reverse Recovery Time
IR at trr(ns)
(nA) VR(V) Max.
Test conditions
100 75 500 200 1.0 10 25 20 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
100 150 500 200 1.0 10 25 20 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
50 200 500 200 1.0 200 100 50 4.0 IF=IR=10 to 200mA, to 0.1 IF
40 150 400 175 0.55 0.10 50 30 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
75 150 400 175 0.55 0.10 50 50 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
35 1502) 500 200 1.0 0.10 100 25 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
100 150 500 200 1.0 20 25 20 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
100 150 500 200 1.0 30 25 20 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
40 150 400 175 0.54 0.50 50 30 4.0 IF=IR=10mA to, IR=1mA
40 150 400 175 0.50 0.10 50 30 10 IF=IR=10mA to, IR=1mA
30 150 400 175 0.55 0.01 50 20
75 150 400 175 1.0 10 100 50 4.0 IF=IR=10mA to, IR=1mA
Notes: 1.These diodes are also available in glass case DO-34
2.Valid provided that leads at a distance of 8mm from case are kept at ambient temperature parameters for diodes
in case DO-34: Ptot=300mW TSTG=-65 to +175
TJ=175 R JA=400K/W
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
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