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CE
CHENYI ELECTRONICS
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-MELF case with the type
designation LL4448
MECHANICAL DATA
. Case: MinMelf glass case(SOD- 80)
. Weight: Approx. 0.05gram
1N4448
SMALL SIGNAL SWITCHING DIODE
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol
Value
Reverse voltage
VR 75
Peak reverse voltage
VRM
100
Average rectified current, Half wave rectification with
IAV
1501)
Resistive load at TA=25 and F 50Hz
Surge forward current at t<1S and TJ=25
IFSM
500
Power dissipation at TA=25
Ptot 5001)
Junction temperature
Storage temperature range
TJ
TSTG
175
-65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Units
Volts
Volts
mA
mW
mW
Symbols
Min.
Typ.
Forward voltage at IF=5mA
VF 0.62
at IF=10mA
VF
Leakage current at VR=20V
IR
at VR=75V
IR
at VR=20V, TJ=150
IR
Junction capacitance at VR=VF=0V
CJ
Reverse breakdown voltage tested with 100 A puse
V(BR)R
100
Reverse recovery time from IF=10mA to IR=1mA,
VR=6V, RL=100
trr
Thermal resistance junction to ambient
R JA
Rectification efficience at f=100MHz,VRF=2V
0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Max.
0.72
1
25
5
50
4
4
3501)
Units
V
V
nA
A
A
pF
V
ns
3501)
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CE
CHENYI ELECTRONICS
1N4448
SMALL SIGNAL SWITCHING DIODE
RATINGS AND CHATACTERISTIC CURVES LL4448
FLG.1-FORWARD CHARACTERISTICS
FIG.2-DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
FIG.3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
FIG.4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
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CE
CHENYI ELECTRONICS
FIG.5-RECTIFICATION EFFICIENCY
MEASUREMENT CIRCUIT
1N4448
SMALL SIGNAL SWITCHING DIODE
FIG.6-LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
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