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Features
Silicon Epitaxial Planar Diodes
for general purpose and switching
The types 1N4149, 1N4447 and 1N4449 are also available
in glass case DO-34.
1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES
D IM
A
B
C
D
D IM E N S IO N S
in c h e s
mm
M in .
M ax.
M in .
M ax.
- 0 .11 4 -
2 .9
- 0 .0 7 5 -
1 .9
- 0 .0 1 7 -
0 .4 2
0 .6 3 0
-
1 6 .0
-
N o te
D IM
A
B
C
D
D IM E N S IO N S
in c h e s
mm
M in .
M ax.
M in .
M ax.
- 0 .1 5 4 -
3 .9
- 0 .0 7 5 -
1 .9
- 0 .0 2 0 -
0 .5 2
1 .0 8 3 - 2 7 .5 0 -
Electrical Characteristics
Type
Peak
reverse
voltage
Max.
aver.
rectified
current
Max.
power
dissip.
at 25
Max. Max. forward
junction voltage drop
temper-
ature
Max. reverse
current
Max. reverse recovery time
1N914
1N4149 1)
1N4150
1N4152
1N4153
1N4154
1N4447 1)
1N4449 1)
1N4450
1N4451
1N4453
VRM V
100
100
50
40
75
35
100
100
40
40
30
IO mA
75
150
200
150
150
150 2)
150
150
150
150
150
Ptot mW
500
500
500
400
400
500
500
500
400
400
400
Tj
200
200
200
175
175
200
200
200
175
175
175
VF V
1.0
at
IF mA
10
In nA
25
at
VR V
20
1.0 10 25 20
1.0 200 100 50
0.55 0.10 50
30
0.55 0.10 50
50
1.0 0.10 100 25
1.0 20 25 20
1.0 30 25 20
0.54 0.50 50
30
0.50 0.10 50
30
0.55 0.01 50
20
trr nS Conditions
Max. 4.0
Max. 4.0
Max. 4.0
Max. 2.0
Max. 2.0
Max. 2.0
Max. 4.0
Max. 4.0
Max. 4.0
Max. 10
-
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=IR=10 to 200 mA, to 0.1 IF
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=10mA, VR=6V, RL=100 , to IR=1mA
I =10mA, V =6V, R =100 , to I =1mA
F RL
R
IF=10mA, VR=6V, RL=100 , to IR=1mA
IF=IR=10mA, to IR=1mA
I =I =10mA, to I =1mA
FR
R
-
1N4454
75
150 400 175 1.0 10 100 50 Max. 4.0
Notes:
(1) These diodes are also avaiable in glass case DO-34
(2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Parameters for diodes in case DO-34:
Ptot=300mW
TJ=175
TS=-65 to +175
Rtha 0.4K/mW
1
IF=IR=10mA, to IR=1mA
N o te