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R
SEMICONDUCTOR
BZX85/C 2V7 THRU BZX85/C 200
1.3W SILICON PLANAR ZENER DIODES
FEATURES
DO-41(GLASS)
For use in stabilizing and clipping circuits with high power rating.
The Zener voltage is graded according to the international E24
standard.
Other voltage tolerance and higher Zener voltages are on request.
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
JF
0.107(2.7)
0.080(2.0)
DIA.
1.00(25.4)
MIN.
0.205(5.20)
0.161(4.10)
Case: DO-41 glass case
Weight: Approx. 0.35 gram
0.034(0.86)
MAX
DIA.
1.00(25.4)
MIN.
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C)
Symbols
Zener current see table "Characteristics"
Power dissipation at TA=25 C
Ptot
Junction temperature
TJ
Storage temperature range
TSTG
1) Valid provided that a distance of 8mm from case is kept at ambient temperature.
Value
1.3 1)
200
-55 to+200
Units
W
C
C
ELECTRICAL CHARACTERISTICS (TA=25 C)
Symbols
Min
Thermal resistance junction to ambient
R JA
Forward voltage at IF=200mA
VF
1) Valid provided that a distance of 8mm from case is kept at ambient temperature.
Typ Max Units
1301)
K/W
1.2 V
JINAN JINGHENG ELECTRONICS CO., LTD.
10-19
HTTP://WWW.JINGHENGGROUP.COM

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BZX85... SILICON PLANAR ZENER DIODES
Type
BZX85/C2V7
BZX85/C3V0
BZX85/C3V3
BZX85/C3V6
BZX85/C3V9
BZX85/C4V3
BZX85/C4V7
BZX85/C5V1
BZX85/C5V6
BZX85/C6V2
BZX85/C6V8
BZX85/C7V5
BZX85/C8V2
BZX85/C9V1
BZX85/C10
BZX85/C11
BZX85/C12
BZX85/C13
BZX85/C15
BZX85/C16
BZX85/C18
BZX85/C20
BZX85/C22
BZX85/C24
BZX85/C27
BZX85/C30
BZX85/C33
BZX85/C36
BZX85/C39
BZX85/C43
BZX85/C47
BZX85/C51
BZX85/C56
BZX85/C62
BZX85/C68
BZX85/C75
BZX85/C82
BZX85/C91
BZX85/C100
BZX85/C110
BZX85/C120
BZX85/C130
BZX85/C150
BZX85/C160
BZX85/C180
BZX85/C200
Zener Voltage range 1)
VZNOM
IZT for VZT2)
V mA
2.7 80
3.0 80
3.3 70
3.6 60
3.9 60
4.3 50
4.7 45
5.1 45
5.6 45
6.2 35
6.8 35
7.5 35
8.2 25
9.1 25
10 25
11 20
12 20
13 20
15 15
16 15
18 15
20 10
22 10
24 10
27 8
30 8
33 8
36 8
39 6
43 6
47 4
51 4
56 4
62 4
68 4
75 4
82 2.7
91 2.7
100 2.7
110 2.7
120 2
130 2
150 2
160 1.5
180 1.5
200 1.5
V
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
4.4...5
4.8...5.4
5.2...6
5.8...6.6
6.4...7.2
7.0...7.9
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
31...35
34...38
37...41
40...46
44...50
48...54
52...60
58...66
64...72
70...79
77...87
85...96
94...106
104...116
114...127
124...141
138...156
153...171
168...191
188...212
Note: 1) Tested with pulse tp=20ms.
JINAN JINGHENG ELECTRONICS CO., LTD.
Dynamic resistance
rZjt and rZjK at IZK
< 20
< 20
< 20
< 15
< 15
< 13
< 13
< 10
<7
<4
< 3.5
<3
<5
<5
<7
<8
<9
< 10
< 15
< 15
< 20
< 24
< 25
< 25
< 30
< 30
< 35
< 40
< 50
< 50
< 90
< 115
< 120
< 125
< 130
< 135
< 200
< 250
< 350
< 450
< 550
< 700
< 1000
< 1100
< 1200
< 1500
< 400
< 400
< 400
< 500
< 500
< 500
< 600
< 500
< 400
< 300
< 300
< 200
< 200
< 200
< 200
< 300
< 350
< 400
< 500
< 500
< 500
< 600
< 600
< 600
< 750
< 1000
< 1000
< 1000
< 1000
< 1000
< 1500
< 1500
< 2000
< 2000
< 2000
< 2000
< 3000
< 3000
< 3000
< 4000
< 4500
< 5000
< 6000
< 6500
< 7000
< 8000
mA
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Reverse leakage current
IR2) at VR
A
< 150
< 100
< 40
< 20
< 10
<3
<3
<1
<1
<1
<1
<1
<1
<1
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
V
1
1
1
1
1
1
1
1.5
2
3
4
4.5
6.2
6.8
7
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
Temp Coefficient
of zener voltage
TKVZ
%/K
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.07...-0.02
-0.07...+0.01
-0.03...+0.04
-0.01...+0.04
0...+0.045
+0.01...+0.055
+0.015...+0.06
+0.02...+0.065
0.03...0.07
0.035...0.075
0.04...0.08
0.045...0.08
0.045...0.085
0.05...0.085
0.055...0.09
0.055...0.09
0.06...0.09
0.06...0.09
0.06...0.095
0.06...0.095
0.06...0.095
0.06...0.095
0.06...0.095
0.06...0.095
0.06...0.095
0.06...0.095
0.06...0.095
0.06...0.095
0.06...0.095
0.06...0.095
0.06...0.095
0.06...0.095
0.07...0.10
0.07...0.10
0.07...0.11
0.07...0.11
0.07...0.11
0.07...0.11
0.07...0.11
0.07...0.11
0.07...0.11
0.07...0.11
10-20
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BZX85... SILICON PLANAR ZENER DIODES
JINAN JINGHENG ELECTRONICS CO., LTD.
10-21
HTTP://WWW.JINGHENGGROUP.COM

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BZX85... SILICON PLANAR ZENER DIODES
Admissible power dissipation versus ambient temperature
(Valid provided that leads at a distance of 10mm from case
are kept at ambient temperature)
W
BZV85...
2
Ptot
1
0
0 100 200 C
Tamb
JINAN JINGHENG ELECTRONICS CO., LTD.
10-22
HTTP://WWW.JINGHENGGROUP.COM

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BZX85... SILICON PLANAR ZENER DIODES
JINAN JINGHENG ELECTRONICS CO., LTD.
10-23
HTTP://WWW.JINGHENGGROUP.COM