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September 2009
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
General Purpose 6-Pin Photodarlington Optocoupler
Features
High sensitivity to low input drive current
Meets or exceeds all JEDEC Registered
Specifications
UL, C-UL approved, File #E90700, Volume 2
IEC 60747-5-2 approved (ordering option V)
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and
TIL113M have a gallium arsenide infrared emitter
optically coupled to a silicon planar photodarlington.
Applications
Low power logic circuits
Telecommunications equipment
Portable electronics
Solid state relays
Interfacing coupling systems of different potentials
and impedances
Schematic
ANODE 1
CATHODE 2
N/C 3
6 BASE
5 COLLECTOR
4 EMITTER
6
6
1
6
1
1
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com

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Absolute Maximum Ratings (TA = 25°C unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute
maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
TSTG
TOPR
TSOL
PD
EMITTER
IF
VR
IF(pk)
PD
DETECTOR
BVCEO
BVCBO
BVECO
PD
IC
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature (Wave)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
Continuous Collector Current
Value
-50 to +150
-40 to +100
260 for 10 sec
250
3.3
80
3
3.0
150
2.0
30
30
5
150
2.0
150
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
mA
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
2
www.fairchildsemi.com

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Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions Device
EMITTER
VF Input Forward Voltage*
IF = 10mA
4NXXM
H11B1M,
TIL113M
IR Reverse Leakage Current*
VR = 3.0V
VR = 6.0V
4NXXM
H11B1M,
TIL113M
C Capacitance*
DETECTOR
VF = 0V, f = 1.0MHz
All
BVCEO Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0
4NXXM,
TIL113M
H11B1M
BVCBO Collector-Base Breakdown Voltage* IC = 100µA, IE = 0
BVECO Emitter-Collector Breakdown Voltage* IE = 100µA, IB = 0
All
4NXXM
H11B1M,
TIL113M
ICEO Collector-Emitter Dark Current*
VCE = 10V, Base Open
All
Min.
0.8
30
25
30
5.0
7
Typ.
1.2
1.2
0.001
0.001
150
60
60
100
10
10
1
Max.
1.5
1.5
100
10
100
Unit
V
µA
pF
V
V
V
nA
Transfer Characteristics
Symbol
Parameter
DC CHARACTERISTICS
IC(CTR) Collector Output Current*(1, 2)
VCE(SAT) Saturation Voltage*(2)
AC CHARACTERISTICS
ton Turn-on Time
toff Turn-off Time
BW Bandwidth(3, 4)
Test Conditions
IF = 10mA, VCE = 10V,
IB = 0
IF = 1mA, VCE = 5V
IF = 10mA, VCE = 1V
IF = 8mA, IC = 2.0mA
IF = 1mA, IC = 1mA
IF = 200mA, IC = 50mA,
VCC = 10V, RL = 100
IF = 10mA, VCE = 10V,
RL = 100
IF = 200mA, IC = 50mA,
VCC = 10V, RL = 100
IF = 10mA, VCE = 10V,
RL = 100
Device
4N32M,
4N33M
4N29M,
4N30M
H11B1M
TIL113M
4NXXM
TIL113M
H11B1M
4NXXM,
TIL113M
H11B1M
4N32M,
4N33M,
TIL113M
4N29M,
4N30M
H11B1M
Min.
50 (500)
10 (100)
5 (500)
30 (300)
Typ.
25
18
30
Max. Unit
mA (%)
1.0
1.25
1.0
5.0
V
µs
100 µs
40
kHz
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
3
www.fairchildsemi.com

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Electrical Characteristics (TA = 25°C Unless otherwise specified.) (Continued)
Isolation Characteristics
Symbol
VISO
RISO
CISO
Characteristic
Test Conditions
Input-Output Isolation Voltage(5) f = 60Hz, t = 1 sec.
VDC
Isolation Resistance(5)
Isolation Capacitance(5)
VDC
VI-O = 500VDC
VI-O = Ø, f = 1MHz
Device
All
4N32M*
4N33M*
All
All
Min.
7500
2500
1500
1011
* Indicates JEDEC registered data.
Typ.
0.8
Max.
Units
VACPEAK
V
pF
Notes:
1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current.
2. Pulse test: pulse width = 300µs, duty cycle 2.0% .
3. IF adjusted to IC = 2.0mA and IC = 0.7mA rms.
4. The frequency at which IC is 3dB down from the 1kHz value.
5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
CTI
VPR
VIORM
VIOTM
RIO
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
Insulation Resistance at Ts, VIO = 500V
Min.
175
1594
1275
850
6000
7
7
0.5
109
Typ.
Max.
I-IV
I-IV
55/100/21
2
Unit
Vpeak
Vpeak
Vpeak
Vpeak
mm
mm
mm
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
4
www.fairchildsemi.com

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Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.7
1.6
1.5
1.4
TA = -55°C
1.3
TA = 25°C
1.2
TA = 100°C
1.1
1.0
1
10
IF - LED FORWARD CURRENT (mA)
100
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.2
IF = 5 mA
1.0
IF = 10 mA
0.8
0.6 IF = 20 mA
0.4
0.2
-60
Normalized to
IF = 10 mA
TA = 25°C
-40 -20 0 20 40 60
TA - AMBIENT TEMPERATURE (°C)
80 100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
Fig. 5 CTR vs. RBE (Saturated)
IF = 20 mA
VCE= 0.3 V
IF = 10 mA
IF = 5 mA
100
RBE- BASE RESISTANCE (k Ω)
1000
Fig. 2 Normalized CTR vs. Forward Current
1.6
VCE = 5.0V
TA = 25°C
1.4
Normalized to
IF = 10 mA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 2 4 6 8 10 12 14 16 18 20
IF - FORWARD CURRENT (mA)
Fig. 4 CTR vs. RBE (Unsaturated)
1.0
0.9
IF = 20 mA
0.8
IF = 10 mA
0.7
0.6
IF = 5 mA
0.5
0.4
0.3
0.2
VCE= 5.0 V
0.1
0.0
10 100
RBE- BASE RESISTANCE (kΩ)
1000
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
100
TA = 25˚C
10
1
IF = 2.5 mA
0.1
0.01
0.001
0.01
IF = 5 mA
IF = 10 mA
IF = 20 mA
0.1 1
IC - COLLECTOR CURRENT (mA)
10
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
5
www.fairchildsemi.com