80N03.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 80N03 데이타시트 다운로드

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DESCRIPTION
The 80N03 uses advanced trench technology
And design to provide excellent RDS (ON ) with
Low gate charge . It can be used in a wide
Vanety of applications .
80N03
VDS
30V
RDS(ON)
--
ID
80A
GENERAL FEATURES
VDS = 30 V, ID = 80 A
RDS(ON) < 6 mΩ @ VGS = 10 V
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stabilty and unifomity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
TO-252-2L top view
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Ordering Information
PART NUMBER PACKAGE BRAND
80N03
TO-252-2L
OGFD
www.goford.cn TEL0755-86350980 FAX0755-86350963

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80N03
Absolute Maximum Ratings (TC=25, unless otherwise noted)
Symbol
Parameter
80N03
Units
VDS
ID
IDM
PD
VGS
EAS
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Drain Current-Continuous(Tc=100)
Pulsed Drain Current
Power Dissipation
Gate-to-Source Voltage
Single PulseAvalanche Energy
Operating Junction and Storage Temperature Range
30
80
50
170
83
± 20
150
-55 to 175
V
A
W
V
mJ
Thermal Resistance
Symbol
RθJC
Parameter
Junction-to-Case
Min. Typ. Max. Units Test Conditions
--
--
1.8
/W
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175.
OFF Characteristics TJ=25unless otherwise specified
Symbol
BVDSS
IGSS
Parameter
Min.
Drain-to-Source
Voltage
Breakdown
30
Gate-to-Source Forward Leakage --
Typ.
--
--
Max. Units Test Conditions
-- V VGS=0, ID=250µA
±100 nA VDS=0V, VGS=±20V
IDSS
Zero Gate Voltage Drain Current -- --
1 µA VDS=30V, VGS=0V
ON Characteristics TJ=25unless otherwise specified
Symbol
RDS(ON)
VGS(TH)
Parameter
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage, Figure 12.
Min.
--
1.0
Typ.
4.8
1.5
Max Units Test Conditions
6.0 mΩ VGS=10V,ID=30A
3.0 V VDS= VGS, ID=250µA
Gfs Forward Transconductance
20 --- -- S VDS=10V, ID=24A
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80N03
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Ciss
Coss
Crss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Test Conditions
-- 2330 --
-- 460 -- pF VDS=15V,VGS=0V, f=1.0MHZ
-- 230 --
Qg Total Gate Charge
Qgs Gate-to-Source Charge
-- 51 --
-- 14 -- nC
VDS=10V, VGS=10V,
ID=30A
Qgd
Gate-to-Drain (“Miller”) Charge
-- 11 --
Drain-Source Diode Characteristics
Diode Forward Voltage VSD VGS=0V,IS=24A -- -- 1.2 V
Diode Forward Current
IS
-- -- -- 80 A
Reverse Recovery Time
Reverse Recovery Charge
Forword Turn-On Time
trr
TJ=25,IF=80A
-- 32 50 nS
Qrr Di/dt = 100 A/µs -- 12 20 nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD
Notes:
1. Repetitive Rating:Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test:Pulse Width 300µs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production.
5. EAS condition: Tj=25,VDD=15V,VG=10V,L=1mH,Rg=25Ω.
www.goford.cn TEL0755-86350980 FAX0755-86350963

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Test circuit
1EAS test Circuits
2Gate charge test Circuit:
3Switch Time Test Circuit
80N03
www.goford.cn TEL0755-86350980 FAX0755-86350963

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
80N03
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
TJ-Junction Temperature()
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
www.goford.cn TEL0755-86350980 FAX0755-86350963