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GOFORD
General Description
The G1007. combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for
power switching application and LED backlighting.
Features
VDSS
100V
RDS(ON)
@10V (typ)
70mΩ
ID
7A
Ultra Low On-Resistance
High UIS and UIS 100% Test
Application
Power switching application
LED backlighting
G1007.
Schematic Diagram
Marking and pin Assignment
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation(Tc=25)
Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25,VDD=50V,VG=10V, RG=25Ω
SOP-8
Value
100
±20
7
8.5
56
28
16
-55 To 175
Unit
V
V
A
A
A
W
mJ
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GOFORD
G1007.
Table 2. Thermal Characteristic
Symbol
Parameter
RJC
Thermal Resistance,Junction-to-Case
Value
3.3
Unit
/W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Symbol
Parameter
Conditions
Min
On/Off States
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=100)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS=0V ID=250μA
VDS=100V,VGS=0V
VDS=100V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=4.5A
100
1.5
Dynamic Characteristics
Typ
2.0
70
Max Unit
1
5
±100
2.6
85
V
μA
μA
nA
V
gFS Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Times
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Source-Drain Diode Characteristics
VDS=5V,ID=4.5A
VDS=50V,VGS=0V
f=1.0MHz
VDS=50V,ID=4.5A
VGS=10V
VDS=50V,RL=8.6Ω
VGS=10V,RG=3Ω
5
612
120
91
11
1.9
2.8
8
3
17
4.5
S
PF
PF
PF
nC
nC
nC
nS
nS
nS
nS
ISD Source-Drain Current(Body Diode)
14 A
ISDM Pulsed Source-Drain Current(Body Diode)
VSD Forward On Voltage(Note 1)
trr Reverse Recovery Time(Note 1)
Qrr Reverse Recovery Charge(Note 1)
TJ=25,ISD=1A,VGS=0V
TJ=25,IF=4.5A
di/dt=500A/μs
56 A
0.74 1
V
21 nS
97 nC
ton Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, Starting TJ=25
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GOFORD
Test Circuit
1) EAS Test Circuits
2) Gate Charge Test Circuit:
3) Switch Time Test Circuit
G1007.
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GOFORD
G1007.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Figure1. On-Region Characteristics
Figure 2: Transfer Characteristics
VDS Drain-Source Voltage (V)
Figure3. On-Resistance vs. Drain Current
and Gate Voltage
VGS Gate-Source Voltage (V)
Figure4. On-Resistance vs. Junction Temperature
ID- Drain Current (A)
Figure5. On-Resistance vs. Gate-Source Voltage
Temperature (°C)
Figure6. Body-Diode Characteristics
VGS Gate-Source Voltage (V)
VDS Drain-Source Voltage (V)
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Figure7. Gate-Charge Characteristics
G1007.
Figure 8. Capacitance Characteristics
Qg Gate Charge (nC)
Figure 9. Maximum Forward Biased Safe
Operating Area
Figure10. Single Pulse Power Rating
Junction-to-Case
VDS Drain-Source Voltage (V)
Pulse Width (s)
Figure11. Normalized Maximum Transient Thermal Impedance
Square Wave Pluse Duration(sec)
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