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OCS7580
Pb-Free Product
OCS N-Channel Enhancement Mode Power MOSFET
General Description
The OCS7580 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
84
6.8
8.2
80
V
m
m
A
Features
VDS=75VID=80A@ VGS=10V
RDS(ON)<8m@ VGS=10V
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
100% UIS TESTED!
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
TO-220-3L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE7580
7580
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TA=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS conditionTj=25,VDD=50V,VG=10V,L=0.3mH ,ID=62A;
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Value
75
±25
80
60
320
30
170
1.13
580
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
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OCS7580
Pb-Free Product
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
RthJC
RthJA
Value
0.88
63
Unit
/W
/W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
75 84
V
Zero Gate Voltage Drain Current(Tc=25)
IDSS
VDS=75V,VGS=0V
1 μA
Zero Gate Voltage Drain Current(Tc=125)
IDSS
VDS=75V,VGS=0V
10 μA
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
±100 nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2 2.85
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
6.5 8
m
Dynamic Characteristics
Forward Transconductance
gFS VDS=5V,ID=30A
66 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
4400
340
260
PF
PF
PF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=30V,ID=30A,
VGS=10V
Qgd
100 nC
20 nC
30 nC
Switching times
Turn-on Delay Time
td(on)
17.8 nS
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
11.8
56
nS
nS
Turn-Off Fall Time
tf
14.6 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
80 A
Pulsed Source-drain current(Body Diode)
Forward on voltage(Note 1)
Reverse Recovery Time(Note 1)
Reverse Recovery Charge(Note 1)
ISDM
VSD Tj=25,ISD=40A,VGS=0V
trr
Qrr
Tj=25,IF=75A,di/dt=100A/μs
320 A
1.2 V
36 nS
56 nC
Forward Turn-on Time
ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width 300μs, Duty Cycle 1.5%, RG=25, Starting Tj=25
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Test circuit 
1EAS test circuits
2Gate charge test circuit:
3Switch Time Test Circuit
OCS7580
Pb-Free Product
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OCS7580
Pb-Free Product
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
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Figure7. BVDSS vs Junction Temperature
OCS7580
Pb-Free Product
Figure8. VGS(th) vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
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