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RF Dual Wideband Gain-Settable
Downconverting Mixer
F1192B
Datasheet
GENERAL DESCRIPTION
This document describes the specifications for the
IDTF1192B Dual Wideband, Gain-Settable, Zero-
DistortionTM Flat-NoiseTM, RF to IF Downconverting Mixer.
The F1192B has been optimized for GSM systems as
well as those utilizing LTE.
The F1192B offers very low power consumption with
excellent linearity. In addition to this and the four
dynamically adjustable gain settings, the F1192B
performance is exceptional across an extremely broad
range of RF and IF frequencies. All of this makes it
ideal for myriad applications including:
• 2G/3G/4G/5G/Multimode Remote Radio Units
• High order MIMO systems, µcells, picocells, DAS
• Point to Point µWave Backhaul systems
• Broadband Repeaters
• Public Safety Infrastructure
• Any radio system operating between 400 MHz and
4000 MHz
COMPETITIVE ADVANTAGE
F1192B offers maximum performance and flexibility at
minimum power consumption. The unique and patented
settable-gain feature allows it to be used in a very wide
variety of radiocard applications, even allowing for
dynamic adjustment of gain to maximize performance on
the fly. The extremely wide RF and IF bandwidths are
achieved with a fixed BOM with all internal matching.
The device can function with as little as -6 dBm LO
power and with independent channel shutdown modes
for ease of integration into high order TDD MIMO
systems.
FEATURES
RF range: 400MHz to 3800MHz
LO range: 400MHz to 3600MHz
IF Range: 50MHz to 600MHz
Dual Path for MIMO
4 Gain Settings; 11dB, 8dB, 5dB, 2dB
2 bit gain step control
Ideal for Multi-Carrier Systems
+35dBm OIP3
Low Noise Figure at any gain setting via IDT’s
FlatNoiseTM technology
Z = 200 Ω IF balanced, 50 Ω RF, 50 Ω LO
single ended
All internally matched. Single BOM for all RF,
LO and IF frequencies
4 mm x 4 mm, 24-pin TQFN package
Independent Path Standby mode
75 nsec settling for gain adjustment
VCC = 3.3V, 835 mW, 620 mW (low power
mode)
FUNCTIONAL BLOCK DIAGRAM
BAND PERFORMANCE SUMMARY
RF Frequency (MHz)
900 1900 2600
Gain (max G11 setting)
11.0 10.8 10.3
Gain (min G2 setting)
2.5 2.3
1.8
NF @ max gain (dB)
8.9 8.7
10.0
IIP3 @ min gain (dBm) 28 27
29
OIP3 @ G8 (dBm)
37 34
IP1dB @ min gain (dBm) 13.6 14.7
35
14.6
2x2 @ min gain (dBc)
-75 -82
-73
Channel Isolation (dB)
48 47
48
Pdiss (mW)
792 835
875
3500
9.0
0.5
10.9
30
35
15.8
-68
45
935
© 2017 Integrated Device Technology, Inc.
1
Rev O August 29, 2017

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F1192B Datasheet
ABSOLUTE MAXIMUM RATINGS
Parameter
VCC to GND
STBY_A, STBY_B, Gain_Select1,
Gain_Select2, RF_A, RF_B, LO1_ADJ,
LO2_ADJ
IF_A+, IF_A-, IF_B+, IF_B-
LO_IN
IF_BiasA, IF_BiasB
IF_Ref_Bias
RF Input Power (RF_A, RF_B) continuous
LO Input Power (LO_IN) continuous
Continuous Power Dissipation
Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10s)
ElectroStatic Discharge – HBM
(JEDEC/ESDA JS-001-2012)
ElectroStatic Discharge – CDM
(JEDEC 22-C101F)
Symbol
VCC
VCTRL
IFOUT
LOIN
IFBIAS
IFREF
RFMAX
LOMAX
PDISS
Tj
TST
TLEAD
Min
-0.5
-0.5
2.4
-0.5
-65
Max
+3.6
Vcc + 0.5
Vcc + 0.5
+0.5
50
500
+20
+20
1.5
150
150
260
Class 2
(2500 V)
Class C3
(1000 V)
Units
V
V
V
V
ohms
ohms
dBm
dBm
W
°C
°C
°C
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL AND MOISTURE CHARACTERISTICS
θJA (Junction – Ambient)
θJC (Junction – Case) [The Case is defined as the exposed paddle]
Moisture Sensitivity Rating (Per J-STD-020)
45 °C/W
2.1 °C/W
MSL1
© 2017 Integrated Device Technology, Inc.
2
Rev O August 29, 2017

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F1192B RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage(s)
Operating Temperature
Range
RF Freq Range
LO Freq Range
IF Range
LO Power
Symbol
VCC
TCASE
FRF
FLO
FIF
PLO
Comment
All VCC pins
Case Temperature
Operating Range
F1192B Datasheet
min
3.15
-40
400
400
50
-6
typ
max
3.45
+105
3800
3600
600
+6
Units
V
deg C
MHz
dBm
© 2017 Integrated Device Technology, Inc.
3
Rev O August 29, 2017

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F1192B Datasheet
IDTF1192B SPECIFICATION (GENERAL)
Typical Application Circuit, VCC = +3.3V, TC = +25°C, FRF = 900MHz, FIF = 199MHz, FLO = 1100MHz, PLO = 0 dBm, PIN
= -10dBm per tone for all gain settings unless otherwise stated, STBY_A = STBY_B = LOW. EVkit IF transformer
losses are de-embedded unless otherwise noted.
Parameter
Logic Input High3
Logic Input Low3
Logic Current
Supply Current
Supply Current –
reduced linearity
Shutdown current
Settling Time
RFIN Impedance
LO Port Impedance
IF Output Impedance
IF Return Loss
LO Return Loss
Symbol
VIH
VIL
IIH, IIL
I1CHA_LB
I1CHA_MB
I1CHA_HB
I2CHA_LB
I2CHA_MB
I2CHA_HB
ISD_2CHA
TSETT
ZRFIN
ZLO
ZIF
RLIF
RLLO
Comment
For all control pins
For all control pins
For all control pins
Single channel - low band LO
Single channel - mid band LO
Single channel - high band LO
Dual channel - low band LO
Dual channel - mid band LO
Dual channel - high band LO
Dual channel
FRF = 2.2GHz, FLO = 2GHz
OIP3 = +20dBm max gain
IFRef_Bias resistor = 3.9Kohm
Both Channels
Pin = -13 dBm
Gate STBY pins per Independent
Channel Standby table
Time for IF Signal to settle from
50% CTRL to within 90% of final
value
Pin = -13 dBm
Gate STBY pins per Independent
Channel Standby table
Time for IF Signal to settle from
50% CTRL to within 0.1 dB of final
value
Pin = -13 dBm
Gate Gain Select pins per Gain
Control table
Time for IF Signal to settle from
50% Gain Select to within 90% of
final value
Single Ended
Single Ended
Differential
Differential 200 ohm
with 4:1 Balun
Single Ended 50 ohm
min
1 .1 1
-5
typ
134
140
147
240
253
265
194
3
max
0 .6 5
+100
154
160
166
275
287
299
units
V
V
μA
mA
220
6
340
920 nsec
75
50
50 Ω
200
-15 dB
-15 dB
Note 1: Items in min/max columns in bold italics are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: JEDEC 3.3V and JEDEC 1.8V logic
© 2017 Integrated Device Technology, Inc.
4
Rev O August 29, 2017

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F1192B Datasheet
IDTF1192B SPECIFICATION (LOW BAND)
Typical Application Circuit, VCC = +3.3V, TC = +25°C, FRF = 900MHz, FIF = 199MHz, FLO = 1100MHz, PLO = 0 dBm, PIN
= -10dBm per tone for all gain settings unless otherwise stated, STBY_A = STBY_B = LOW. EVkit IF transformer
losses are de-embedded unless otherwise noted. Gain Setting = G5 (~ 5 dB gain).
Parameter
Power Gain
G5 Gain Change over temp
Gain Slope
Noise Figure
Input IP3
G3 IIP3 change over temp
Output IP3
Symbol
G11
G8
G5
G2
G5TempDrift
GainSLOPE
NFG11
NFG8
NFG5 4, 5
NFG2
IIP3G11
IIP3G8
IIP3G5 4
IIP3G2
IIP3G3TempDrift
OIP3G11
OIP3G8
OIP3G5
OIP3G2
Comment
Gain setting = G11
Gain setting = G8
Gain setting = G5
Gain setting = G2
Tcase -40C to +105C
referenced to +25C
IF center 200MHz
100MHz BW
Gain setting = G11
Gain setting = G8
Gain setting = G5
Gain setting = G2
Gain setting = G11
800 kHz tone separation
Gain setting = G8
800 kHz tone separation
Gain setting = G5
800 kHz tone separation
Gain setting = G2
800 kHz tone separation
Tcase -40C / +105C
referenced to +25C
Gain setting = G11
800 kHz tone separation
Gain setting = G8
800 kHz tone separation
Gain setting = G5
800 kHz tone separation
Gain setting = G5
Tc = +105°C
LO power = -3dBm
Vcc = 3.15V
Gain setting = G2
800 kHz tone separation
min
4 .0 5
typ
11.1
8.3
5.4
2.5
+0.7
-0.7
+ 0.006
8.9
9.4
10.1
10.7
24
max
6 .7 5
11.7
units
dB
dB
dB/MHz
dB
29
26 28
dBm
28
-2.6/
+0.6
35
dB
37
32
dBm
33 34
30
© 2017 Integrated Device Technology, Inc.
5
Rev O August 29, 2017