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IPD80R450P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Fullyqualifiedacc.JEDECforIndustrialApplications
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
800
V
RDS(on),max
0.45
Qg,typ
24
nC
ID 11 A
Eoss @ 500V
2.7
µJ
VGS(th),typ
3
V
ESD class (HBM) 2
-
Type/OrderingCode
IPD80R450P7
Package
PG-TO 252-3
Marking
80R450P7
DPAK
tab
2
1
3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.1,2018-02-09

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800VCoolMOSªP7PowerTransistor
IPD80R450P7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.1,2018-02-09

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800VCoolMOSªP7PowerTransistor
IPD80R450P7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
ID
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
ID,pulse
EAS
EAR
IAR
dv/dt
Gate source voltage
VGS
Power dissipation
Operating and storage temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
Maximum diode commutation speed3)
Ptot
Tj,Tstg
IS
IS,pulse
dv/dt
dif/dt
Min.
-
-
-
-
-
-
-
-20
-30
-
-55
-
-
-
-
Values
Typ. Max.
- 11
- 7.1
- 29
- 29
- 0.22
- 1.8
- 100
- 20
- 30
- 73
- 150
-8
- 29
-1
- 50
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=1.8A; VDD=50V
mJ ID=1.8A; VDD=50V
A-
V/ns VDS=0to400V
V
static;
AC (f>1 Hz)
W TC=25°C
°C -
A TC=25°C
A
V/ns
A/µs
TC=25°C
VDS=0to400V,ISD<=2.2A,Tj=25°C
VDS=0to400V,ISD<=2.2A,Tj=25°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient RthJA
Thermal resistance, junction
for SMD version
- ambient
RthJA
Soldering temperature, wave- & reflow
soldering allowed
Tsold
Min.
-
-
-
Values
Typ. Max.
- 1.7
- 62
35 45
Unit Note/TestCondition
°C/W -
°C/W Device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm2 (one
°C/W
layer 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
- - 260 °C reflow MSL1
1) Limited by Tj max. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs
Final Data Sheet
3
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800VCoolMOSªP7PowerTransistor
IPD80R450P7
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V(BR)DSS
VGS(th)
IDSS
Gate-source leakage curent incl. zener
diode
IGSS
Drain-source on-state resistance
Gate resistance
RDS(on)
RG
Min.
800
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3 3.5
-1
10 -
-1
0.38 0.45
0.99 -
1-
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.22mA
µA
VDS=800V,VGS=0V,Tj=25°C
VDS=800V,VGS=0V,Tj=150°C
µA VGS=20V,VDS=0V
VGS=10V,ID=4.5A,Tj=25°C
VGS=10V,ID=4.5A,Tj=150°C
f=250kHz,opendrain
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related1)
Effective output capacitance, time
related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
Values
Typ. Max.
770 -
14 -
24 -
Unit Note/TestCondition
pF VGS=0V,VDS=500V,f=250kHz
pF VGS=0V,VDS=500V,f=250kHz
pF VGS=0V,VDS=0to500V
- 305 - pF ID=constant,VGS=0V,VDS=0to500V
-
10 -
ns
VDD=400V,VGS=13V,ID=4.5A,
RG=7.5
-
6-
ns
VDD=400V,VGS=13V,ID=4.5A,
RG=7.5
-
40 -
ns
VDD=400V,VGS=13V,ID=4.5A,
RG=7.5
-
10 -
ns
VDD=400V,VGS=13V,ID=4.5A,
RG=7.5
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
-
-
-
-
Values
Typ. Max.
4-
9-
24 -
4.5 -
Unit Note/TestCondition
nC VDD=640V,ID=4.5A,VGS=0to10V
nC VDD=640V,ID=4.5A,VGS=0to10V
nC VDD=640V,ID=4.5A,VGS=0to10V
V VDD=640V,ID=4.5A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V
Final Data Sheet
4
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800VCoolMOSªP7PowerTransistor
IPD80R450P7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
Qrr
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
1000 -
11 -
17 -
Unit Note/TestCondition
V VGS=0V,IF=4.5A,Tf=25°C
ns VR=400V,IF=2.2A,diF/dt=50A/µs
µC VR=400V,IF=2.2A,diF/dt=50A/µs
A VR=400V,IF=2.2A,diF/dt=50A/µs
Final Data Sheet
5 Rev.2.1,2018-02-09