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HI-SINCERITY
MICROELECTRONICS CORP.
H01N45A
N-Channel Power Field Effect Transistor
Features
Typical RDS(on)=4.1
Extremely High dv/dt Capability
100% Avalanche Tested
Gate Charge Minimized
New High Voltage Benchmark
Applications
Switch Mode Low Power Supplies (SMPS)
Low Power, Low Cost CFL (Compact Fluorescent Lamps)
Low Power Battery Chargers
Absolute Maximum Ratings
Symbol
VDS
VDGR
VGS
ID
ID
IDM
PD
dv/dt
Tj, Tstg
IAR
EAS
Parameter
Drain-Source Voltage (VGS=0)
Drain-Gate Voltage (RGS=20K)
Gate-Source Voltage
Drain Current (Continuous) at TC=25oC
Drain Current (Continuous) at TC=100oC
Drain Current (Pulsed)
Total Power Dissipation at TC=25oC
Derate Factor
Peak Diode recovery Voltage Slope
Operating Junction and Storage Temperature Range
Avalanche Current, Repetitive or Not-Repetitive (Pulse width
limited by TJ Max.)
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Thermal Data
Symbol
Rthj-amb
Rthj-lead
TL
Parameter
Thermal Resistance Junction-Ambient (Max.)
Thermal Resistance Junction-Leadt (Max.)
Maximum Lead Temperature for Soldering Purpose
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 1/4
H01N45A Pin Assignment
3-Lead Plastic TO-92
Package Code: A
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
123
D
Symbol: G
S
Value
450
450
±30
0.5
0.315
2
2.5
0.025
3
-65 to 150
1.5
25
Units
V
V
V
A
A
A
W
W/°C
V/ns
°C
A
mJ
Value
120
40
260
Units
oC/W
oC/W
oC
H01N45A
HSMC Product Specification

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 2/4
Electrical Characteristics (Tcase=25°C, unless otherwise specified)
Symbol
Characteristic
Test Conditions
ON/OFF
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Dynamic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS=0)
Gate-Body Leakage Current
(VDS=0)
Gate Threshold Voltage
Static Drain-Source On Resistance
VGS=0V, ID=250uA
VDS=Max. Rating
VDS=Max. Rating, TC=125oC
VGS=±30V
VDS=VGS, ID=250uA
VGS=10V, ID=0.5A
gFS*1
Ciss
Coss
Crss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching On
VDSID(on)xRDS(on)max., ID=0.5A
VDS=25V, VGS=0V, f=1MHz
td(on) Turn-on Delay Time
tr Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Off
(VDD=225V, ID=0.5A, RG=4.7,
VGS=10V)
(VDS=360V, ID=0.5A, VGS=10V,
RG=4.7)
tr(Voff)
tf
tC
Off-Voltage Rise Time
Fall Time
Cross-Over Time
Source Drain Diode
(VDD=360V, ID=1.5A, RG=4.7,
VGS=10V)
ISD Source-Drain Current
ISDM*2
Source-Drain Current (pulsed)
VSD*1
Forward On Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
*1: Pulse Test: Pulse duration=300us, duty cycle 1.5%
*2: Pulse width limited by safe operating area.
ISD=1.5A, VGS=0
ISD=1.5A, di/dt=100A/us
VDD=100V, TJ=150oC
Min.
450
-
-
-
2.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
-1
- 50
- ±100
3 3.7
4.1 4.5
1.1 -
185 230
27.5 -
6 10
6.7 -
4-
14 20
2-
3.2 -
8.5 -
12 -
18 -
- 1.5
-6
- 1.6
225 -
530 -
4.7 -
Unit
V
uA
nA
V
S
pF
ns
nC
ns
A
V
ns
uC
A
H01N45A
HSMC Product Specification

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 3/4
TO-92 Dimension
B
C
E
F
α2
A
123
α3
D
H
I α1
G
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
HA
0 1N4 5
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-92 Plastic Package
HSMC Package Code: A
DIM Min. Max.
A 4.33 4.83
B 4.33 4.83
C 12.70
-
D 0.36 0.56
E - *1.27
F 3.36 3.76
G 0.36 0.56
H - *2.54
I - *1.27
α1 - *5°
α2 - *2°
α3 - *2°
*: Typical, Unit: mm
TO-92 Taping Dimension
DIM Min. Max.
H2 H2
H2AH2A
D2
A 4.33 4.83
D 3.80 4.20
D1 0.36 0.53
D2 4.33 4.83
A
F1,F2 2.40 2.90
H3 H 15.50 16.50
H1 8.50 9.50
H2 -
1
H2A -
1
L
L1
F1F2
T2 P1
TP
T1
H4 H
H3 - 27
H4 - 21
L - 11
H1
W1
L1 2.50
-
W P 12.50 12.90
P1 5.95 6.75
D1 D
P2 50.30 51.30
T - 0.55
T1 - 1.42
T2 0.36 0.68
P2 W 17.50 19.00
W1 5.00 7.00
Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H01N45A
HSMC Product Specification

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HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
TP
TL
Tsmax
Ramp-up
tP
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
Products
Pb devices.
Pb-Free devices.
Peak temperature
245oC ±5oC
260oC +0/-5oC
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 4/4
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
5sec ±1sec
5sec ±1sec
H01N45A
HSMC Product Specification