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UNISONIC TECHNOLOGIES CO., LTD
9014
NPN SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL
& LOW NOISE
FEATURES
* High total power dissipation. (450mW)
* Excellent hFE linearity.
* Complementary to UTC 9015
1
TO-92
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
9014L-x-T92-B
9014G-x-T92-B
TO-92
9014L-x-T92-K
9014G-x-T92-K
TO-92
Note: Pin assignment: E: Emitter B: Base C: Collector
Pin Assignment
123
EBC
EBC
Packing
Tape Box
Bulk
MARKING INFORMATION
PACKAGE
TO-92
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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9014
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC 100 mA
Collector Dissipation
PC 450 mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Base-Emitter on voltage
Output Capacitance
Current Gain-Bandwidth Porduct
Noise Figure
SYMBOL
TEST CONDITIONS
BVCBO IC=100A, IE=0
BVCEO IC=1mA, IB=0
BVEBO IE=100A, IC=0
ICBO VCB=50V, IE=0
IEBO VEB=5V, IC=0
hFE VCE=5V, IC=1mA
VCE(SAT) IC=100mA, IB=5mA
VBE(SAT) IC=100mA, IB=5mA
VBE(ON) VCE=5V, IC=2mA
Cob VCB=10V, IE=0, f=1MHz
fT VCE=5V, IC=10mA
NF
VCE=5V, IC=0.2mA
f=1KHz, RS=2K
CLASSIFICATION OF hFE
MIN TYP MAX UNIT
50 V
45 V
5V
50 nA
100 nA
60 280 1000
0.14 0.3
V
0.84 1.0
V
0.58 0.63 0.7
V
2.2 3.5 pF
150 270
MHz
0.9 10 dB
RANK
RANGE
A
60-150
B
100-300
C
200-600
D
400-1000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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9014
TYPICAL CHARACTERISTICS
Static Characteristic
100
90 IB=160µA
80 IB=140µA
70 IB=120µA
60 IB=100µA
50 IB=80µA
40 IB=60µA
30 IB=40µA
20
10 IB=20µA
0
0 10 20 30 40 50
Collector-Emitter Voltage, VCE(V)
NPN SILICON TRANSISTOR
1000
500
300
DC Current Gain
VCE=5V
100
50
30
10
1 3 5 10 30 50 100 300 1000
Collector Current, IC(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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