X0202NUF.pdf 데이터시트 (총 11 페이지) - 파일 다운로드 X0202NUF 데이타시트 다운로드

No Preview Available !

X02
1.25 A sensitive gate SCR
Features
on-state rms current: 1.25 A
repetitive peak off-state voltage: 600 V and
800 V
gate triggering current: 50 and 200 µA
Applications
ground fault circuit interrupters
overvoltage crowbar protection in power
supplies
capacitive ignition circuits
Description
The X02 SCR can be used as the on/off function
in applications where topology does not offer high
current for gate triggering.
This device is optimized in forward voltage drop
and inrush current capabilities for reduced power
losses and high reliability in harsh environments.
Table 1. Device summary
Order code
X0202MA
X0202MN
X0202NA
X0202NN
X0205MA
X0205NA
X0202NUF
600 V
Y
Y
Y
Voltage
800 V
Y
Y
Y
Y
A
G
K
A
G
A
K
SOT-223
X02xxN
A
KG
TO-92
X02xxA
A
K
G
SMBflat-3L
X0202NUF
Sensitivity µA
200
200
200
200
50
50
200
Package
TO-92
SOT-223
TO-92
SOT-223
TO-92
TO-92
SMBflat-3L
January 2011
Doc ID 7480 Rev 4
1/11
www.st.com
11

No Preview Available !

Characteristics
1 Characteristics
X02
Table 2.
Symbol
Absolute ratings (limiting values, TJ = 25 °C unless otherwise specified)
Parameter
Value
Unit
IT(RMS) On-state rms current (180 °Conduction angle)
IT(AV) Average on-state current (180 °Conduction angle)
ITSM Non repetitive surge peak on-state current
I²t I²t Value for fusing
di/dt
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TO-92
TL = 63 °C
SOT-223 Ttab = 99 °C
SMBflat-3L Ttab = 111 °C
TO-92
TL = 63 °C
SOT-223 Ttab = 99 °C
SMBflat-3L Ttab = 111 °C
tp = 8.3 ms Tj = 25 °C
tp = 10 ms
tp = 10 ms Tj = 25 °C
1.25
0.8
25
22.5
2.5
A
A
A
A2s
F = 60 Hz Tj = 125 °C
50 A/µs
tp = 20 µs
Tj = 125 °C
Tj = 125 °C
1.2
0.2
- 40 to + 150
- 40 to + 125
A
W
°C
Table 3.
Symbol
Electrical characteristics (TJ = 25 °C unless otherwise specified)
Test conditions
X0202
X0205
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VD = 12 V, RL = 140 Ω
VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩ
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1 mA, RGK = 1 kΩ
VD = 67% VDRM, RGK = 1 kΩ
Tj = 125 °C
Tj = 110 °C
Min.
Max.
Max.
Min.
Min.
Max.
Max.
Min.
20
200 50
0.8
0.1
8
5
6
10 15
Unit
µA
V
V
V
mA
mA
V/µs
Table 4. Static electrical characteristics
Symbol
Test conditions
VTM ITM = 2.5 A, tp = 380 µs
VTO Threshold voltage
Rd Dynamic resistance
IDRM IRRM VDRM = VRRM, RGK = 1 kΩ
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Max.
X0202 X0205
1.45
0.9
200
5
500
Unit
V
V
mΩ
µA
µA
2/11 Doc ID 7480 Rev 4

No Preview Available !

X02 Characteristics
Table 5. Thermal resistances
Symbol
Rth(j-l)
Rth(j-t)
Rth(j-t)
Junction to leads (DC)
Junction to tab (DC)
Junction to tab (DC)
Parameter
Rth(j-a)
Junction to ambient (DC)
S = 5 cm2
TO-92
SOT-223
SMBflat-3L
TO-92
SOT-223
SMBflat-3L
Max.
Value
60
25
14
150
60
75
Unit
°C/W
Figure 1.
Maximum average power
dissipation versus average
on-state current (full cycle)
P(W)
1.2
1.0
360°
0.8 α
α = 180°
0.6
0.4
0.2
0.0
0
IT(AV)(A)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Figure 2.
Average and DC on-state current
versus tab (SOT-223, SMBflat-3L) or
lead (TO-92) temperature
I (A)
1.4 T(AV)
1.2 D.C. (TO-92)
1.0
D.C. (SMBflat-3L)
D.C. (SOT-223)
0.8
α = 180° (TO-92)
0.6
0.4 α = 180° (SOT-223)
0.2
Tlead or Ttab (°C)
0.0
0 25
α = 180° (SMBflat-3L)
50 75
100
125
Figure 3. Average and DC on-state current
versus ambient temperature
I (A)
1.4 T(AV)
1.2 D.C. (SOT-223)
1.0 D.C. (SMBflat-3L)
0.8
D.C. (TO-92)
0.6
0.4 α = 180° (TO-92)
α = 180° (SOT-223)
0.2
Tamb(°C)
0.0
α = 180° (SMBflat-3L)
0 25 50 75
100 125
Figure 4.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
K=[Zth(j-a)/Rth(j-a)]
1.00
TO-92
SMBflat-3L
0.10
SOT-223
tp(s)
0.01
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05
Doc ID 7480 Rev 4
3/11

No Preview Available !

Characteristics
X02
Figure 5.
Relative variation of triggering,
Figure 6.
holding and latching current versus
junction temperature
Relative variation of holding
current versus gate-cathode
resistance (typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
1.50
1.25
Typical values
1.00
0.75
IH & IL
RGK = 1kΩ
0.50
IGT
0.25
Tj(°C)
0.00
-40 -20 0 20 40 60 80 100 120 140
IH[RGK] / IH[RGK=1kΩ]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.E-02
RGK(kΩ)
1.E-01
1.E+00
Tj=25
1.E+01
Figure 7.
Relative variation of dV/dt immunity Figure 8.
versus gate-cathode resistance
(typical values)
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
dV/dt[RGK] / dV/dt[RGK=1kΩ]
10.0
1.0
Tj = 125°C
VD = 0.67 x VDRM
RGK(kΩ)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
dV/dt[CGK] / dV/dt[RGK=1kΩ]
20
18 VD = 0.67 x VDRM
Tj = 125°C
16 RGK = 1kΩ
14
12
10
8
6
4
2
CGK(nF)
0
0 2 4 6 8 10 12 14 16 18 20 22
Figure 9. Surge peak on-state current
versus number of cycles
ITSM(A)
25
20
15 Non repetitive
Tj initial=25°C
10
Repetitive
Tamb=25°C
5
0
1 10
tp=10ms
One cycle
Number of cycles
100 1000
Figure 10. Non repetitive surge peak on state
current for a sinusoidal pulse and
corresponding value of I2T
ITSM(A), I2t (A2s)
300
100
dI/dt limitation
Tj initial = 25°C
ITSM
10
1
0.01
tp(ms)
0.10
1.00
I2t
10.00
4/11 Doc ID 7480 Rev 4

No Preview Available !

X02 Ordering information scheme
Figure 11. On-state characteristics (maximum Figure 12. Thermal resistance junction to
values)
ambient versus copper surface
under tab (SOT-223, SMBflat-3L)
3E+1
1E+1
ITM(A)
Tj max.:
Vt0=0.9V
Rd=200mΩ
Tj=max
1E+0
Tj=25°C
VTM(V)
1E-1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Rth(j-a)(°C/W)
170
160
150
140
130
120
110
100
90
80
SOT-223
70 (maximum)
60
50
01
Epoxy printed circuit board FR4,
copper thickness 35 µm
SMBF3L (typical)
S(cm²)
2
3
4
5
2 Ordering information scheme
Figure 13. Ordering information scheme
Sensitive SCR series
Current
02 = 1.25 A
Sensitivity
02 = 200 µA
05 = 50 µA
Voltage
M = 600 V
N = 800 V
Package
A = TO-92 (A"Blank")
N = SOT-223 (N"No Blank”)
UF = SMBF3L
Packing mode
1BA2 = Bulk
2BL2 = Ammopack
5BA4 = Tape and reel 7” (SOT-223)
Blank = Tape and reel 13” (SMBflat-3L)
X 02 02 M ZBlank 1BA2
Doc ID 7480 Rev 4
5/11